| Paper Title | Page |
|---|---|
|
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD Authors: Shigehiro Nishino, Yasuichi Masuda, Satoru Ohshima, Chacko Jacob |
123 |
|
HCl Etching Behavior on Low-Tilt-Angle and Step-Free 4H-SiC Surfaces Authors: Andrew J. Trunek, J. Anthony Powell, Philip G. Neudeck, M. Mrdenovich |
593 |
|
Authors: Yasuichi Masuda, Satoru Ohshima, Chacko Jacob, Shigehiro Nishino |
139 |