Papers by Keyword: Hot-Wire CVD

Abstract: The fabrication of ultra thin silicon nitride (SiN_X) layer (< 2 nm) on amorphous silicon (a-Si) in-situ hot-wire CVD by decomposing ammonia (NH₃) gas is reported. Approximately 1.5 nm thin SiN_X is formed by nitridation of 40 nm thick a-Si for 10 min at substrate temperature of 250 °C. The amorphous phase of SiN_X formed on a-Si and a-Si layer deposited on c-Si wafer is identified by Raman spectroscopy. The formation of ultra thin SiN_X by nitridation of a-Si at 250 °C is confirmed by X-ray photoelectron spectroscopy (XPS) depth profile measurement of SiN_X/a-Si structured film. The report indicates that the HWCVD method can be used for fabricating superlattice structures consisting of ultra thin SiN_X layers (< 2 nm).

Abstract: We investigated the wet-etching properties of SiCN films using chemical agents. Our results show that sodium hydroxide, potassium hydroxide and phosphoric acid etch SiCN films, while hydrochloric acid, sulfuric acid, acetic acid, ammonium chloride and sodium chloride cannot etch SiCN films.