Papers by Keyword: IR-Spectroscopy

Abstract: New d-electron and rare-earth metal tungstates (CoRE2W2O10; CoRE4W3O16; Co2RE2W3O14 and NiRE2W2O10) were studied by the IR and EPR spectroscopy methods. The IR absorption bands with their maxima can be assigned to the symmetric and asymmetric stretching modes of W-O bonds in the joint of WO6 octahedra and also to the oxygen double WOOW bridge bonds. The wide, unstructured EPR powder spectra of these compounds and their temperature evolution have been analyzed and interpreted.

Abstract: As a result of the Schiff base condensation the gadolinium macroacyclic and macrobicyclic Schiff base complexes have been synthesized and investigated by infrared spectroscopy (IR) and electron paramagnetic resonance (EPR). Both electron ionization and electron spray Molecular Spectroscopy spectra confirmed the [1:1] proportion of a ligand to metal in gadolinium macrocyclic and mocrobicyclic Schiff base complex samples. The thermogravimetrydifferential thermal analysis (TG-DTA) indicated the presence of two water molecules in the innersphere of the macrobicyclic complex and confirmed no water coordination of the metal ion in the macroacyclic complex. The temperature dependence of the integrated intensity of the EPR spectra enabled the magnetic interactions in the spin system of these compounds to be revealed.

Abstract: On the basis of previously recorded Raman and IR spectral data on different crystallohydrates of alkaline-earth 12-tungstophosphoric acid salts (obtained from mother solution and those kept under constant relative humidity (RH) of 35%), an effort was made to determine the position of cations in the Keggin unit. Shifts or band splitting in vibrational spectra of the salts, as well as the changes in band intensities were found to be connected to the cation properties. The spectral data also demonstrated a great influence of cation properties on the secondary structure of Keggin anions and dynamics of protonic species.

Abstract: Cz-grown, carbon-doped silicon samples were irradiated by fast neutrons. We investigated the annealing behaviour of oxygen-related defects, by infrared spectroscopy. We studied the reaction channels leading to the formation of various VmOn defects and in particular the VOn defects formed by the accumulation of oxygen atoms and vacancies in the initially produced by the irradiation VO defects, as the annealing temperature ramps upwards. We mainly focused on bands appearing in the spectra above 450 oC. A band at 1005 cm-1 is found to be the convolution of two bands at 1004 and 1009 cm-1. The latter band has the same thermal stability with the 983 cm-1 of the VO4 defect and therefore is also attributed to this defect. The former band has the same thermal stability with three other bands at 965, 1034 and 1048 cm-1. These four bands may be attributed to VOn (n=5,6) defects, although other VmOn complexes are also potential candidates. Furthermore, we found that pre-treatments of the samples at 1000 oC, with or without the application of high hydrostatic pressure lead to an increase in the concentration of the VO2, VO3 and generally VOn defects in comparison with that of the untreated samples.

Abstract: Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.