Papers by Keyword: InP

Abstract: The synthesis behaviour and characterisation of nanocrystalline materials is presented. The materials synthesised are ZnO and InP doped with shallow donors and acceptors, respectively. Characterisation was performed with radioactive isotopes using the perturbed γγ angular correlation technique (PAC), thereby yielding local information on an atomic scale. The characterisation was supplemented by X-ray diffraction, transmission electron microscopy, UV/VIS absorption spectroscopy, photoluminescence spectroscopy, and extended X-ray absorption fine structure spectroscopy. It was shown that the successful incorporation of dopants in nanocrystalline ZnO and InP requires annealing at temperatures at which the growth of the nanocrystals in the sample becomes a significant process.

Abstract: A reliable fabrication method for providing close spacing between the emitter mesa and the base contact metal of InP-based heterojunction bipolar transistor is disclosed. The silicon nitride sidewall was formed on the emitter electrode and mesa periphery. It was used as a mask for emitter mesa etching and also as an overhang to self-align the base contact with respect to the emitter mesa. The self-aligned device fabricated by this technique exhibited better high-frequency performances with fT of 138 GHz and fmax of 143 GHz, respectively, superior to the re-aligned one on the same epitaxy wafer.

Abstract: An effective inter-atomic potential is proposed in order to describe structural and dynamical properties of II-VI and III-V semiconductors. The interaction potential consists of twoand three-body interactions. The two-body term takes into account steric repulsion, charge-induce dipole interaction due to the electronic polarizability of ions, Coulomb interaction due to charge transfer between ions, and dipole-dipole (van der Waals) interactions. The three-body term, which has a modified Stillinger-Weber form, describes bond-bending as well as bond-stretching effects. Here we report the fitting and the application of this interaction potential for InP in the crystalline phase and for CdTe in the crystalline and liquid phases. The structural correlations are discussed through pair distribution, coordination number and bond-angle functions. Vibrational density of states for InP and CdTe as well as the static structure factor for liquid CdTe are in very good agreement with experimental data.

Abstract: InP and InAs quantum rods were synthesized via the reactions of monodispersed indium droplets with phosphide or arsenide ions, respectively. In these reactions indium droplets, which do not act as a catalyst but rather as a reactant, are completely consumed. For the synthesis of InP and InAs quantum rods with a narrow size distribution, a narrow size distribution of indium particles is required because each indium droplet serves as a template to strictly limit the lateral growth of individual InP or InAs nanocrystals. Free-standing InP (130 Å diameter and 870 Å length) and InAs (180 Å diameter and 745 Å length) quantum rods without residual metallic catalyst at the rod tip were synthesized from the diluted transparent solutions of metallic indium. Both kinds of synthesized nanorods are in the strong confinement regime since the Bohr diameters of InP and InAs are 200 and 700 Å, respectively.

Abstract: The preparation and characterization of thick InP layers by Liquid Phase Epitaxy with admixture of Ce, Tb, Dy and Yb in the growth melt is reported. Measurement of temperature dependent Hall affect, C-V characteristics and low-temperature photoluminescence show the change of n®p type conductivity and considerable improvement of structural and electro-optical parameters for all studied rare-earth elements. Mn was identified as dominant acceptor impurity in the case of Tb and Dy addition. In the case of Ce and Yb the dominant acceptor was identified as isoelectronic Ce or Yb on the In site subjected to a strong electron-lattice interaction. The reported high quality thick p-type InP layers could well be used for the preparation of radiation detector structures.

Abstract: InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.