Papers by Keyword: Interstitial Oxygen

Abstract: The axial distribution of electrical and optical properties of a 4 inch Czochralski-grown silicon single crystal were analyzed by different methods that can be applied in the scanning mode. These methods were tested with respect to the suitability to reveal growth striations. The residual stress was visualized by SIRIS (Scanning Infrared Stress Inspection System) and SIREX (Scanning Infrared Stress Explorer), the electrical resistivity by LPS (Lateral Photovoltage Scanning) and SRP (Spreading Resistance Profiling), and the lifetime of the minority charge carriers by MDP (Microwave Detected Photoconductivity) mapping. The concentration of interstitial oxygen (O_i) across the growth striations was determined by FTIR (Fourier Transform Infrared) spectroscopy. We demonstrate for the first time on the micrometer scale that the O_i scan is very well-correlated with the profile of Δσ (difference of the in-plane principal stress components). The stress field is tensile oriented in growth direction, i. e. perpendicularly to the growth striations. The stress-concentration coefficient has been estimated to be in the order of 10^-13 Pa cm^-3 what does agree well with previous XRD results.

Abstract: The aim of this work is to study the low temperature annealing effect on the electrical properties of p-type multicrystalline silicon grown by Heat Exchanger Method (HEM).The minority carrier lifetime variation, the transition metal elements behavior, the sheet resistivity and the interstitial oxygen concentration after different temperatures annealing under N₂ ambient were investigated using quasi-steady state photoconductance technique (QSSPC), secondary ion mass spectroscopy (SIMS), four-probe measurement and Fourier transform infrared spectrometer (FTIR), respectively. The obtained results indicate in the temperature range of 300°C to 700°C that the effective lifetime increases and reaches its maximum values of 28 μs at 500 °C and decreasing to 6 μs at 700 °C. This amelioration is due probably to metallic impurities internal gettering in the extended defects and in the oxygen precipitates as observed on SIMS profiles and the FTIR spectra. From 300 °C to 500 °C the sheet resistivity values rest unchanged at 30 Ω.cm^-2 and rises significantly to reach 45 Ω.cm^-2 for T> 500 °C.

Abstract: Double perovskite oxide YBaCuFeO_5+δ samples (labeled as “as-prepared”) were sintered by a solid-state reaction technique. Mechanical spectra of as-prepared sample were measured under vacuum condition from room temperature up to 720K by the reed vibration method. In the first heating run, two internal friction peaks were observed around 380 and 620K (labeled as P1 and P2, respectively) in YBaCuFeO_5+δ. In the subsequent cooling run, both of them disappeared and a small step-like decrease of the internal friction around 500K was found. This step-like change was reproduced in the following thermal cycles. Thermogravimetric analysis (TGA) was also performed in order to monitor the oxygen content of the sample. It showed that the interstitial oxygen concentration decreased in the first heating run. The interstitial oxygen relaxation is suggested to be the origin of P1 peak. In dielectric measurements, a dielectric loss peak appeared around the temperature of the P2 internal friction peak and the peak temperature was independent on the measuring frequency. It is expected that P2 is associated with some kind of transitions of the interstitial oxygen. Further mechanical loss measurement of the annealed sample and scanning electron microscopy characterizing the as-prepared and annealed samples, provided more information on the interstitial oxygen in YBaCuFeO_5+δ samples.

Abstract: The recovery of the boron implantation damage can be very difficult. Depending on the energy and the dose many dislocations are generated at the projected range of the boron implantation. The morphology of these dislocations depends on the silicon substrate. In this work we demonstrate that the interstitial oxygen concentration ([Oi]) is related with the dislocation dimension, density end morphology. Particularly long dislocation dipoles were generated by the boron implantation in substrate with interstitial oxygen, and their density is connected with the [Oi] concentration.

Abstract: Many researchers became interested in the discovery of Bi2Sr2CaCu2O8+δ oxides with critical temperature of around 80 K. It is known that the critical temperature is related to the CuO2 planes of the material. For this reason, the study of the interstitial oxygen in these oxides is of great relevance. The samples were prepared by means of conventional solid state reactions, through the stoichiometric mixture of precursory powders. After the sinterization, the samples were submitted to measurements of density, electrical resistivity, x-ray diffraction, scanning electron microscopy and energy dispersion spectroscopy, with the objective of performing their characterization. The measurements of mechanical spectroscopy were performed by a torsion pendulum. The results show three relaxation processes in the temperature range of 200 and 700 K, with activation energy of approximately 0.9 eV, which has been attributed to the dynamics of the interstitial oxygen present in the material.

Abstract: Since the discovery of high-temperature superconductivity of cuprate oxides, it has been clear that it is strongly affected by the oxygen content, which is also a crucial factor to determine other physical properties of high Tc superconductors. Non-stoichiometric (interstitial) oxygen strongly influences the physical properties of various superconducting oxides, in particular by creating conducting holes. It is now ascertained that the amount of holes injected depends not only on the content of interstitial oxygen, but also on its ordering. Rearrangement of the oxygen ordering may occur even below room temperature due to the unusual high mobility of these atoms. This way, mechanical spectroscopy is one of the most adequate techniques for the study of the mobility (diffusion) of oxygen atoms. This technique allows the determination of the jump frequency of an atomic species precisely, regardless of the model or the different possible types of jumps. In order to evaluate the mobility and the effect of oxygen content on these oxides, ceramic samples we prepared and submitted to several oxygen removal cycles alternately with mechanical relaxation measurements. As for SBCO, it was assumed that the peak was due to O(1)-O(5) jumps of oxygen atoms at the chain terminals or in chain fragments in the orthorhombic phase. In the case of BSCCO, the results showed complex anelastic relaxation structures, which were attributed to interstitial oxygen atom jumps between two adjacent CuO planes.

Abstract: The coherent agglomeration of interstitial oxygen into single-plane and double-plane plates can explain the two peaks in the M-shaped nucleation curves in Czochralski silicon. The density of nucleation sites for the double-plane plates corresponds to the VO2 concentration. Ab initio calculations have shown that the agglomeration of oxygen atoms in single-plane and doubleplane plates is energetically favorable. These plates are under compressive strain. VO2 agglomeration plays only a minor role for modeling the M-shaped nucleation curves because of prior homogenization treatments. It is of much higher impact if as-grown wafers are subjected to nucleation anneals because of the higher vacancy concentration which was frozen in during crystal cooling. This results in higher nucleation rates at higher temperatures. Because the oxygen diffusivity below 700 °C is important for the nucleation rate and many controversial results about the diffusivity in this temperature range were published, we have analyzed the data from literature. We have demonstrated that the effective diffusivity of oxygen at temperatures below 700 °C which corresponds to the quasi equilibrium dimer concentration is very similar to the extrapolation from oxygen diffusivity at high temperature. The high effective diffusivities from out-diffusion and precipitation experiments, and the somewhat lower effective diffusivities from dislocation locking experiments are the result of an ongoing formation of fast diffusing dimers because the equilibrium is disturbed as the result of the strongly increasing difference in the diffusion length between interstitial oxygen and the fast diffusing dimer with decreasing temperature.

Abstract: Behavior of the irradiation defects after annealing in electron irradiation CZ-Si has been studied by Four-Point Probe Measurement, Fourier Transform Infrared Absorption Spectrometer (FTIR) and Optical Microscope. The resistivities of irradiated silicon would decline under annealed at 750°C, it is considered that the oxygen related defects which present donor state were produced after annealed.

Abstract: The composite SmBa2Cu3O7-δ (Sm-123), obtained by the substitution of the ion Y for Sm in the very well known and studied YBa2Cu3O7-δ (Y-123), is potentially attractive for better understanding superconductivity mechanisms and for its applications as electronic devices. Sm-123 samples show higher critical temperatures than Y-123 ones do and a larger solubility of Sm in Ba-Cu-O solvent, which makes their growth process faster. When oxygen is present interstitially, it strongly affects the physical properties of the material. The dynamics of oxygen can be investigated by anelastic spectroscopy measurements, a powerful technique for the precise determination of the oscillation frequency and the internal friction when atomic jumps are possible. Anelastic spectroscopy allows determining the elasticity modulus (related to the oscillation frequency) and the elastic energy loss (related to the internal friction) as a function of the temperature. The sample was also investigated by X-ray diffraction (XRD), scanning electronic microscopy (SEM), and electric resistivity. The results obtained show a thermally activated relaxation structure composed by at least 3 relaxation processes. These processes may be attributed to the jumps of oxygen atoms present of the Cu-O plane in the orthorhombic phase.