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Articles by keyword: «Ion Channeling»

• Damage Evolution and Recovery in Al-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p815)
• Defect Characteristics in Sulfur-Implanted CVD Homoepitaxial Diamond
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p171)
• Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2001 (p875)
• Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p957)
• Lattice Strain Analysis of VPE-Grown ZnS Epitaxial Layers on (001) GaAs by RBS - Channeling and High Resolution XRD Measurements
  Published in: Advances in Crystal Growth (p237)
• Propagation of Dry Etch-Induced Damage in III-V Semiconductors
  Published in: Diffusion in GaAs and other III-V Semiconductors (p175)
• Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques
  Published in: PRICM-5 (p1341)