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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by keyword: «
LBIC
»
10 papers on 1 page:
1
Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
Published in:
Silicon Carbide and Related Materials - 2002
(p317)
Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
Published in:
Beam Injection Assessment of Defects in Semiconductors
(p123)
Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques
Published in:
Beam Injection Assessment of Defects in Semiconductors
(p105)
Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p525)
Laser Characterization of Semiconductors
Published in:
Semiconductor Processing and Characterization with Lasers
(p141)
LBIC Control Mapping of Textured Silicon Thin Film Obtained by Liquid Phase Epitaxy on Transferable Silicon Grid
Published in:
Beam Injection Assessment of Microstructures in Semiconductors
(p49)
LBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar Silicon
Published in:
Beam Injection Assessment of Defects in Semiconductors
(p115)
Measurement of the Normalized Recombination Strength of Dislocations in Multicrystalline Silicon Solar Cells
Published in:
Gettering anf Defect Engineering in Semiconductor Technology IX
(p701)
Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p503)
Spatially Resolved Defect Analysis in Cz-Silicon after Copper-Nickel Co-Precipitation by Virtue of Light-Beam-Induced Current Measurements
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIII
(p431)
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