Papers by Keyword: Low-K Material

Abstract: Using diluted HF (0.05-0.1%) as cleaning solutions, experimental results showed that the etching behavior of Cu strongly depended on the dissolved oxygen (DO) concentration and the chamber atmosphere conditions. On the contrary, the Cu etch rate was not affected by the HF concentration. A complete reverse trend was observed for plasma-treated OSG2.4. The etching behavior of plasma-treated OSG2.4 was not affected by DO concentration and chamber atmosphere conditions, but was strongly dependent on the HF concentration. The etch rate determined on patterned structure with low-k exposed, using CD measurements, confirmed the results obtained on blanket plasma-treated OSG2.4 material.

Abstract: We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.