Papers by Keyword: MIS Structure

Abstract: he negative differential capacity has been observed in case of MIS structures with SiO_x and Si_xO_yN_z films containing Si nanoclusters. It has been shown that existence of negative differential capacity depends on charge state of Si nanoclusters or electron traps　in the insulating matrix. In case of Si_xO_yN_z films the two peaks have been revealed in C-V characteristics connected with Si nanoclusters and electron traps. The low-temperature annealing of Si_xO_yN_z films in hydrogen passivates the electron traps caused by Si dangling bonds and as a result the peak in C-V characteristics connected with electron traps disappears. The following low-temperature annealing in vacuum caused the some effusion of hydrogen from the film and appearance of electron traps and connected with them capacity shoulder on C-V characteristics. It has been shown, that the frequency and temperature dependences of the negative differential capacitance in C-V curves can be successfully used for the determination of nanoclusters and traps parameters for the samples with the nanoclusters embedded in SiO₂ or Si_xO_yN_z films.

Abstract: The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al₂O₃/Si have been studied. The carbon based thin film is deposited by using DC unbalanced magnetron sputtering using Fe doped carbon pellet as a target. Electrical properties of this structure have been analyzed through I-V characteristics measurements using cross-sectional electrode configurations. In-plane I-V measurement confirms the electrical conductivity of carbon layer is higher than Al₂O₃. The role of carbon thin film has been investigated by comparing the I-V characteristic of MIS structure with and without carbon thin film. Carbon layer and interface states of carbon/γ-Al₂O₃ have a significant contribution to enhance the cross-sectional current density. A simple energy band diagram model and theoretical calculation have been developed to further analyze this I-V characteristics data. This study is expected to be an alternative way to support the realization of future carbon-based electronic devices.