Papers by Keyword: Molecular Beam Epitaxy

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Characterization of Polycrystalline GaN Layers Grown on Alkali-Metal-Free Glass Substrates by Molecular-Beam Epitaxy Assisted by Electron Cyclotron Resonance Plasma
Authors: T. Yodo, Toshiyuki Hirano, Yasunori Harada
307
Defect States in InAs Quantum Dots Characterized by Photo-Induced Current Transient Spectroscopy
Authors: Hoon Young Cho
81
RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy
Authors: Xu-Qiang Shen, Toshihide Ide, Mitsuaki Shimizu, Hajime Okumura
1461
Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE
Authors: Norio Onojima, Jun Suda, Hiroyuki Matsunami
1457
Incorporation, Diffusion and Agglomeration of Carbon in Silicon
Authors: P. Lavéant, P. Werner, G. Gerth, U.M. Gösele
189
Germanium on SiC(0001): Surface Structure and Nanocrystals
Authors: Bernd Schröter, K. Komlev, Ute Kaiser, G. Heß, G. Kipshidze, W. Richter
247
Polytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by MBE: A Nondestructive Identification
Authors: Bernd Schröter, A. Winkelmann, Andreas Fissel, V. Lebedev, W. Richter
227
In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces
Authors: Volker Cimalla, Konstantinos Zekentes, Katerina Tsagaraki, Thomas Stauden, F. Scharmann, Joerg Pezoldt
187
The Influence of Ge on the SiC Nucleation on (111)Si Surfaces
Authors: Joerg Pezoldt, T. Wöhner, Thomas Stauden, J.A. Schaefer, György Vida
183
Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)
Authors: Joerg Pezoldt, Bernd Schröter, Volker Cimalla, Thomas Stauden, R. Goldhahn, Henry Romanus, Lothar Spieß
179
Showing 51 to 60 of 74 Paper Titles