Papers by Keyword: Oxide-SiC Interface

Abstract: Many investigations have been conducted on the growth conditions of SiO2 on SiC to improve the oxide quality and the properties of the silicon carbide-silicon dioxide interface. In this work a comparison between a wet oxidation and an oxidation in N2O ambient diluted in N2 is proposed. The interface state density Dit near the conduction-band edge of SiC has been evaluated by conventional C-V measurements obtaining results similar or better than the literature data. Furthermore, the slow trapping phenomena have been studied and preliminary results are reported.

Abstract: Real time observation of SiC oxidation was performed using an in-situ ellipsometer over the temperature range from 900°C to 1150°C. The relations between oxide thickness and oxidation time were obtained precisely by virtue of the real time measurements. We analyzed the relations between oxide thickness and oxidation time by applying the Deal and Grove model to obtain the linear and parabolic rate constants. Taking advantage of in-situ measurements, we successfully obtained the oxidation rate constants with high accuracy.