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Papers by Keyword: Oxide-Trapped Charges

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Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC

Authors: Masahito Yoshikawa, Takeshi Ohshima, Hisayoshi Itoh, Kunimasa Takahashi, Makoto Kitabatake

635

Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures

Authors: Masahito Yoshikawa, Kazutoshi Kojima, Takeshi Ohshima, Hisayoshi Itoh, Sohei Okada, Yuuki Ishida

1129

Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

Authors: Masahito Yoshikawa, K. Saitoh, Takeshi Ohshima, Hisayoshi Itoh, Isamu Nashiyama, Yasutaka Takahashi, K. Ohnishi, Hajime Okumura, Sadafumi Yoshida

1017