Papers by Keyword: Plasma Hydrogenation

Abstract: In the present paper we discuss the defects at the oxide/Si interface and the structure of silicon oxide films grown on plasma hydrogenated (100) and (111)Si. The effect of oxide thickness ranging from 7 to 40 nm on the interface parameters was examined. Electrically active defects were characterized through C-V and G-V measurements. The dependence of the refractive index on oxide thickness was studied. Information on the oxide structure was inferred through the refractive index evaluated from ellipsometric measurements. From both, the electrical and optical results a characteristic oxide thickness was found, below which the oxide structure is different from SiO2, most probably SiOх. It is related to a modified Si surface during the pre-oxidation plasma treatment and its value depends on Si orientation and pre-clean conditions. A characteristic oxide thickness of 13 nm was found for Si hydrogenated without heating and, of 9 nm for Si hydrogenated at 300oC.

Abstract: Amorphous Ta-O films were synthesized by reactive pulse unbalanced magnetron sputtering system in this paper. Then the well-crystallized Ta-O films were obtained after they were annealed in vacuum at 800°C for 1h. Hydroxyl group on the surface of amorphous tantalum oxide films was prepared by plasma hydrogenation method. The phase structure was investigated by X-ray diffraction (XRD). The hydroxyl group was characterized using Fourier transform infrared spectroscopy (FTIR). The morphology and growth behavior of the vitro platelet adhesion on the as-deposited, annealed and plasma hydrogenated Ta-O films were analyzed through scanning electron microscope (SEM). The results showed that the quantity of platelet adhered onto the annealed surface were less than as-deposited and hydrogenised films. A new method of preparing hydroxyl group without coupling agents on the inorganic biomaterials has been studied by plasma hydrogenation.

Abstract: µ-Raman measurements were carried out on hydrogen implanted, plasma hydrogenated and subsequently annealed Cz Silicon samples, respectively. In comparison to as-implanted or asplasma treated samples, in consideration of the thermal evolution, the effects of the implanted and subsequently plasma treated samples were analyzed. An enhanced trapping of molecular hydrogen in multivacancies has been observed after hydrogen implantation and subsequent plasma hydrogenation. In comparison to as-implanted samples, the intensity of the local vibrational modes (LVM) of vacancy-hydrogen complexes and silicon-hydrogen bonds are increasing.