Papers by Keyword: Plasma Nitridation

Abstract: The plasma nitriding as a technology for finishing of material surface layers was carried out on selected material. The effect of plasma nitriding conditions on the thickness and hardness of nitrided layer was investigated. The influence of plasma nitriding period on the thickness of the plasma nitrided layers was comprehensively assessed on the C55 steels. Plasma nitriding was carried out on selected material at 500 °C under 280 Pa with a mixture atmosphere of H₂ and N₂ in the plasma nitriding equipment. The period of the plasma nitriding process was changeable from 5 to 20 hours. Measurements of the properties of nitrided layers of selected material were solved by using experimental methods in accordance with standards. The samples were characterized by GDOES spectrometry, optical microscopy, and hardness testing. The depths of the plasma nitriding layers were also detected using cross-sectional microhardness profiles. Relation between plasma nitriding period and a thickness of a nitrided layer was explained and has shown that microhardness and surface hardness of mentioned samples were significantly increased.

Abstract: We demonstrated the impact of plasma nitridation on thermally grown GeO2 for the purposes of obtaining high-quality germanium oxynitride (GeON) gate dielectrics. Physical characterizations revealed the formation of a nitrogen-rich surface layer on the ultrathin oxide, while keeping an abrupt GeO2/Ge interface without a transition layer. The thermal stability of the GeON layer was significantly improved over that of the pure oxide. We also found that although the GeO2 layer is vulnerable to air exposure, a nitrogen-rich layer suppresses electrical degradation and provides excellent insulating properties. Consequently, we were able to obtain Ge-MOS capacitors with GeON dielectrics of an equivalent oxide thickness (EOT) as small as 1.7 nm. Minimum interface state density (Dit) values of GeON/Ge structures, i.e., as low as 3 x 1011 cm-2eV-1, were successfully obtained for both the lower and upper halves of the bandgap.

Abstract: We propose a treatment combining nitrogen plasma exposure and forming gas annealing (FGA) to improve the electrical properties of SiO2/SiC interfaces. Although conventional FGA at 450°C alone is not effective for reducing interface traps and fixed charges, our combination treatment effectively reduces both even at moderate temperatures. We achieved further improvement by applying our treatment at higher (over 900°C) FGA temperatures, including lower interface state density (Dit) values for both deep and shallow energy levels (1 - 4 x 1011 cm-2eV-1). Considering that nitrogen incorporation promotes hydrogen passivation of interface defects, a possible mechanism for the improved electrical properties is that interface nitridation eliminates carbon clusters or Si-O-C bonds, which leads to the formation of simple Si and C dangling bonds that can be readily terminated by hydrogen. We therefore believe that our treatment is a promising method for improving the performance of SiC-based MOS devices.

Abstract: In this work we present a comprehensive comparison of ultra thin thermally nitrided (TN) to plasma nitrided (PN) gate dielectrics (GD). We will show that thermal nitridation is a promising technique to increase the nitrogen concentration up to 25%. Furthermore, we will demonstrate that ultra thin thermally nitrided GD have the potential to be an alternative solution compared to plasma nitrided GD. This work includes the analysis of physical and electrical parameters as well as reliability results from reliability characterization. Additionally, we investigated the impact of Deuterium on electrical parameters and reliability behavior.

Abstract: In this paper, gate dielectric scaling with nitrogen incorporation technologies is reviewed. In key technologies such as thermal nitridation, oxide/nitride stacked dielectric structure and nitrogen implant/plasma played fundamental role in advance of semiconductor industry. Besides the technologies, primary integration schemes and their impacts on device performance and reliability are also covered.

Abstract: In this paper, it is presented that flicker (1/f) noise of ultra thin gate oxide can be improved by initial oxidation and subsequent plasma nitridation(PN). PN which raises Nitrogen peak upward from the Si/Oxide interface to gate polysilicon/Oxide interface is adopted mainly to improve the life time such as Negative-Bias Temperature Instability (NBTI) and hot carrier in Nano CMOS technology. Three different types of initial oxidation prior to plasma nitridation are investigated. One is slow thermally grown oxide(STO) in very small Oxygen ambient, another is rapid thermally grown oxide(RTO) and the other is grown in Nitrous oxygen ambient (NO). Oxide thickness of all splits is about 14.5< Then, it is shown that STO has the lowest drain current noise power (Sid) among the splits. The interface trap densitie (Dit) of each oxide is characterized using charge pumping method. Finally, we reached a conclusion that the 1/f noise can be significantly reduced by initial STO and Plasma Nitridation in Nano CMOS technology.