Papers by Keyword: Poly-Si Thin Film

Abstract: In this article, we have explained quantum state observed in fabricating poly-silicon the thin film and calculated the crystallization procession of rapid thermal annealing as a function of light energy. Equal energy driving principle was presented, it is shown that the change in magnetic frequency leads to the conversion of magnetic field energy to annealing energy.

Abstract: The process of Vacuum Evaporation and characteristic of poly-Si thin film on different kinds of substrates (copper and glass) are studied in this thesis. The samples were characterized by TEM, AFM and metallographic microscope. The result indicates that the samples after annealing treatment are polycrystalline. Thin film on copper substrate shows better properties in degree of crystallization, grain smoothness, compact density and uniformity. The thickness of thin films on both copper and glass substrates is 1.2µm.The grain size ranges from 0.1~0.15µm.And the pressure-resisting value of the poly-Si thin film is 384.2V.

Abstract: In this work, an macro-micro model has been developed for the melting and resolidification of thin Si films induced by excimer-laser annealing. The macro-micro model, considering the formation of microstructures: nucleation and growth, can obtain the better results than macro-models. Except temperature distributions, the macro-micro models can offer more information about solidification process, such as undercooling, grain size, grain density etc. These data could help to predict the physical properties of materials. In this study, the finite difference method is utilized to solve the heat transfer problem. The specific heat/enthalpy method and the source term scheme are employed to handle the absorbed and released latent heat. The algorithm that allows for nucleation is based on classical nucleation theory. Accordingly, the model enables the prediction of grain size, as well as the calculation of other critical responses of the a-Si film, such as undercooling. From the computational results, it can be found that when the laser fluence is higher, the cooling rate after laser irradiation is lower, the maximum undercooling is smaller and the grain size is larger or the grain density is lower. The average grain sizes, obtained from the simulation results of the proposed model, agree fairly well with those from the experimental data reported in the literature. It can also be found that the reflectivity of the surface gives a good way to observe the phase changes and the melting duration.

Abstract: This paper is to investigate a double splitting excimer laser technique for making poly Si films. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 m in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200~500 mJ/cm2), laser pulse number (1~2 shots) and delay time between two shots (one nanosecond). Average grain sizes from SEM photos are used to analyze the effects of these parameters. Firstly, in the excimer laser experiment, different laser fluences are utilized to study the effect on the microstructure of the silicon film. Purely from the viewpoint of heat transfer, the Si film obtains more energy has the slower cooling or solidification rate, which results in the larger grain. From the experimental results, it can be found that the grain size increases until the laser fluence increases up to the critical value of complete melting, which limits the grain growth method of energy increase. In this work, a double-splitting-laser method is proposed. In the method, a laser pulse from an excimer laser is divided into two pulses by a beam splitter. The cyclic optical path is used to control the delay time of the second pulse. Optical mirrors and optical attenuators are utilized to adjust the energy density of these two laser pulses. The delay time between these two pulses is changeable and controlled in the order of nanosecond. The second pulse is applied when the Si film is solidifying after the irradiation of the first one. This could enhance the solidification time and enlarge the grain size of the poly-Si film.

Abstract: In the fabrication of a poly-Si film, an a-Si thin layer on glass substrate is melted by the irradiation of an excimer laser with the duration of nanosecond scale, and then is cooled down to form the poly-Si one. For analyzing the fabricating process, an efficient two-dimensional numerical model has been developed in this work, based on the finite difference method and the specific heat/enthalpy method used to handle the release of latent heat. The model can simulate the heat transfer, melt and solidification behavors of a-Si films subjected to the laser irradiation. Numerical analysis was performed by solving the heat flow equation which incorporates the material properties of temperature dependence, the surface reflectivity of silicon film, the variation of the incident power density with time and heat lose by the radiation and convection from the film surfaces into the surroundings. From the analysis of temperature responses for different laser intensities, the thresholds corresponding to the surface and full melting of the Si film can be found. The temperature responses are essentially different in the partial-melting and the complete-melting regimes. The Ft (surface melting threshold) and Fc (full-melt threshold) obtained from the simulation results of the proposed model in this study agree fairly well with those from the experimental data reported in the literature. In the partial-melting regime, the maximum temperature is close to the melting point of amorphous Si, since it is the point where solid a-Si is transformed into liquid state and the high latent heat can absorb extra energy to keep the temperature at the melting point. The fluence larger than Fc is the complete-melting regime, the maximum temperature increases with fluence. It is also found that the variation of the surface reflectivity gives a good way to observe the phase change and the melting duration. When the a-Si melts, the reflectivity rapidly goes up to a steady value which is consistent with the reflectivity of liquid silicon, and stays there until the melt silicon begins to solidify. As the irradiation energy of laser increases, the melting duration in the silicon layer is prolonged.