Papers by Keyword: Pulsed DC Magnetron Sputtering

Abstract: Aluminum oxide (Al₂O₃) and Copper (Cu) are popular into insulator and electrode for thermoelectric module. The Al₂O₃ + clay substrate was prepared by solid state reaction and the thin Cu electrode prepared by pulsed DC magnetron sputtering. Crystal structure and microstructure of the substrate were measured by using the X-ray diffraction and scanning electron microscopy techniques. The Vicker hardness and density were measured by Micro Hardness tester and Archimedes method, respectively. The X-ray diffraction patterns of the substrate were obtained mix phases such as Al₂O₃, clay and Cu phases. The hardness and density were obtained mean value of 332.11 HV and 2.47 g/cm³.

Abstract: Due to its ability of photocatalysis and photoinduced superhydrophilicity, TiO₂ was paid significant attentions in recent years. In this study, TiO₂ films were deposited at room temperature and 300 °C by pulsed dc reactive magnetron sputtering. The gas pressure was varied in the range of 0.3-1.1 Pa by filling Ar/N₂ gas mixture with the ratio of 1:1. The surface morphologies, phase structure and optical property of the TiO₂ films were investigated. TiO₂ films with good crystalline quality containing mainly of anatase phase were obtained by deposition using gas pressure of 0.7 Pa at room temperature and gas pressure of 1.5 Pa at 300 °C.

Abstract: This study investigates the effects of damp heat stability on the optoelectronic properties of ZnO:Al (AZO) and ZnO:Ga(GZO) films with respect to thin-film solar cells. The lowest resistivities of AZO and GZO thin films are 8.2621×10-4 Ω-cm and 2.8561×10-4 Ω-cm, respectively. After damp heat testing for 999h, the resistivities of AZO and GZO thin film increase by 39.72% and 11.97%, respectively. XPS binding energy analysis shows that the AZO thin film has a higher O 1s spectrum than the GZO thin film. Thus, the carrier concentration of films decreases, as a higher binding energy is attributed to the chemisorbed oxygen atoms (O-). Experimental results show that after expousre to a damp heat test at 85°C and 85% relative humidity for electrical, optical, structural, and morphological analysis, GZO films are more stable than AZO films.

Abstract: Thin films of ZrO₂-8mol%Y₂O₃ have been deposed by pulsed DC magnetron sputtering method. The substrates of Ni-cermet and alloy-600 for the films were used. The results of the investigation of the X-ray diffraction patterns and SEM showed that the films are nanocrystalline and belong to cubic symmetry. The relaxation process is related to the ion transport in thin films. The results of the investigation of the temperature dependencies of thin films ionic conductivity (σ) showed that the dependence σ(T) is caused by the temperature dependence of oxygen vacancy mobility, while the number of charge carriers remains constant with temperature.