Papers by Keyword: Recombination

Abstract: Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in p-type Czochralski silicon processed in very clean conditions to contain oxide precipitates. Precipitation treatments were varied to produce a matrix of samples, which were then characterised by chemical etching and transmission electron microscopy to determine the density and morphology of the precipitates. The lifetime component associated with the precipitates was isolated by preventing or factoring out the effects of other known recombination mechanisms. The lifetime component due to unstrained precipitates could be extremely high (up to ~4.5ms). Recombination at unstrained precipitates was found to be weak, with a capture coefficient of ~8 x 10^-8cm³s^-1 at an injection level equal to half the doping level. Strained precipitates and defects associated with them (dislocations and stacking faults) act as much stronger recombination centres with a capture coefficient of ~3 x 10^-6cm³s^-1 at the same level of injection. The lifetime associated with strained precipitates increases with temperature with a ~0.18eV activation energy over the room temperature to 140°C range. The shape of the injection level dependence of lifetime was similar for all the specimens studied, with the magnitude of the lifetime being dependent on the precipitate density, strain state and temperature, but independent of precipitate size.

Abstract: We investigate the effect of hyperfine interaction on magnetoresistance in nonmagenetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from hyperfine interaction-dependent spin precession picture. The magnetoresistance depends on initial spin orientation of electron to hole in electron-hole pairs. Increasing hyperfine interaction slows down change of the magnetoresistance with magnetic field. The field dependence, the sign and saturation value of the magnetoresistances are composite effects of recombination and dissociation rate constants of singlet and triplet electron-hole pairs.

Abstract: General characteristics of dye-sensitized nanoporous semiconductor electrode systems are summarized, with a particular emphasis on dye-sensitized solar cells. Properties of these electrode systems which distinguish them from conventional bulk semiconductor electrodes are highlighted. Current understanding of electron transport in dye-sensitized solar cells, in terms of the diffusion and multiple trapping models, is reviewed. Alternative transport and recombination theories are also briefly reviewed. Electron transfer at the semiconductor/electrolyte interface in dye-sensitized solar cells is reviewed and recent experimental results obtained by the authors are highlighted. As applicable, common techniques for characterization of electron transport and transfer in dye-sensitized solar cells are described, with reference to case studies where the electron diffusion length in dye-sensitized solar cells has been estimated. The steady-state aspects of the dye-regeneration process are also reviewed, together with the cross-surface percolation of holes in the dye monolayer and the finite-length diffusion of redox species in the electrolyte.

Abstract: We have analyzed the types of combined window patterns’ basic figures, their variations, and their regular layouts’ characteristics of 2×2 module. According to the jacquard and printed fabrics’ characteristics of the forms in use and the means of achieving the patterns, combined with practical cases, we studied and explored how to expand the layouts’ characteristics of combined window patterns to textile’s artistic design.

Abstract: Dye-sensitized solar cells (DSSCs) are one of the promising photovoltaic devices because of their lower manufacturing cost and higher energy conversion efficiency. Wide-gap, porous semiconducting metal oxides are generally used as electrode materials of DSSCs. Previously we utilized ZnO as DSSC electrodes and achieved a high conversion efficiency of 6.58% by improving the structure of ZnO films. However, open-circuit voltage (VOC), one of the factors to determine the performance of DSSCs, was still at a lower level (≈ 0.60 V) than that of common TiO2-based cells. We believe that the lower VOC is due mainly to the occurrence of recombination. In this work, we tried to enhance VOC by controlling the heating process of electrodes and suppressing the recombination for further development of ZnO-based DSSCs. As a result, we have achieved a higher VOC of 0.725 V, confirming that the sintering behavior (grain growth and/or necking of grains) influenced largely the characteristics of DSSCs.

Abstract: The effects of measurement technique and measurement conditions (injection level, temperature) on the measured carrier lifetimes in n- 4H-SiC epilayers are investigated. For three optical measurement techniques, it is shown that the high and low injection lifetimes can vary dramatically. Differences in the lifetime for varying injection level and temperature are approached both experimentally and via carrier dynamics simulations, assuming Z1/Z2 as the dominant defect. Reasonable agreement between measured and calculated behavior is obtained, as is insight into the recombination kinetics associated with the lifetime limiting defect.

Abstract: The features of microdefect formation during dislocation-free Si single crystals are considered in connection with the specific thermal CZ growing conditions. For this purpose the thermal crystal growth histories are calculated by means of a global thermal mathematical model and then on their basis the intrinsic point defect recombination and microdefect formation are modeled numerically. Difficulty of such integrated approach is explained by of the complicated and conjugated thermal modeling and a presence of various temperature zones in growing single crystal, answering to various defect formation mechanisms.

Abstract: The room-temperature photoluminescence (RTPL) was investigated in commercial nitrogen-doped 4H-SiC substrates. In a typical RTPL spectrum of n-type 4H-SiC substrate, the ‘band-edge’ emission was similar to PL signatures that are typically attributed to free-exciton recombination in high-quality thick epitaxial layers. The origin of the deep-defect ‘red’ emission and its influence on recombination properties of SiC remain unclear. In most of the substrates in which the ‘red’ RTPL band was strong, clear reverse correlation between the ‘red’ and ‘band-edge’ RTPL intensities was observed. In contrast, direct correlation was observed between the ‘bandedge’ PL map and distribution of the net free electron concentration. There is a possibility that incorporation of nitrogen donors is influenced by (or influences) incorporation of lifetime-limiting deep defects.

Abstract: The forward current was investigated in 4H-SiC p+n structures grown by sublimation epitaxy. The doping level, Nd-Na, of the n-layer was about (3-4)x1016 cm-3 and the diode area was in the range from 1x10-5 to 2x10-4 cm2. The observed current can be considered as current due to bulk recombination in the space charge region of the pn junction via deep level center or due to surface recombination. The criterion which was performed in this study to differentiate such currents was the investigation of recombination current versus perimeter/area ratio dependence. It was found that no pronounced difference in the recombination current parameters for diodes with different perimeter/area ratio was observed, i.e. current due to surface recombination was not observed for the 4H-SiC pn structures investigated.

Abstract: In this paper the electrical activity of stacking faults and that of their bounding partial dislocations in degraded PiN diodes has been investigated by the technique of electron beam induced current (EBIC). The recombination behavior of C- and Si-core dislocations is discussed. It is proposed that nonradiative recombination significantly exceeds radiative recombination on both the C- and Si-core partial dislocations. At the same time, predominantly radiative recombination takes place in the faulted planes that presumably act as quantum wells.