Papers by Keyword: STS

Abstract: The essay is included as following: Standard Transfer Specification, DES algorithm, human program design, the characteristic of DES algorithm, the safety of DES algorithm and 3DES algorithm. Analyzing DES encryption and decryption algorithm results, we could well know the characteristic of DES algorithm. This algorithm is successfully tested on VC++ 6.0.

Abstract: The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Abstract: At the (110) cleaved surfaces of p-type GaAs with degenerate doping level, the negative differential resistance (NDR) inside of the band gap was observed in scanning tunneling spectra (STS) measurement. The origin of the NDR was found to be the voltage dependence of the transmission coefficient through the double tunneling barrier, a phenomenon similar to that reported by Esaki and Stiles in planar metal-insulator-semiconductor tunnel junctions.

Abstract: This paper reports the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) studies of porous Zn (p- Zn) prepared by electrochemical etching. Further, the post annealing of the p- Zn is carried out and STM/STS investigations are also performed. STM studies of these samples reveal the porous structure and display small, pseudo-spherical shaped crystals in the range of 2 and 100 nm, 2 and 50 nm, and similar average corrugation of 9 nm for p- Zn and oxidized p-Zn. STS analysis of freshly prepared p- Zn shows a band gap of 2.4 eV along with metallic conductance behavior. However, oxidized p- Zn reveals a distinct wide band gap (3 eV) and shows shallow donor states near the conduction band.