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Articles by keyword: «SWBXT»

• 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
  Published in: Silicon Carbide and Related Materials 2006 (p53)
• Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
  Published in: Silicon Carbide and Related Materials 2001 (p407)
• Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2003 (p91)
• Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p251)
• Observation of 2in SiC Wafer by SWBXT at SPring-8
  Published in: Silicon Carbide and Related Materials 2001 (p411)
• Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes
  Published in: Silicon Carbide and Related Materials - 1999 (p453)