| Paper Title | Page |
|---|---|
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Nucleation of Quasicrystals in Bulk Glass Forming Zr-Cu-Ni-Al Alloys Authors: Daniela Zander, Rainer Janlewing, Andreas Rüdiger, Uwe Köster |
25 |
|
Numerical Analysis of mc-Si Crystal Growth Authors: Koichi Kakimoto, Hitoshi Matsuo, Syo Hisamatsu, Birava Ganesh, Bing Gao, X.J. Chen, Li Jun Liu, Hiroaki Miyazawa, Yoshihiro Kangawa |
193 |
|
Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields Authors: Wen Ting Xu, Hai Ling Tu, Qing Chang, Qing Hua Xiao, Xiao Lin Dai, Yun Xia Liu, Zong Feng Li, Lin Chang, Wei Da Liu |
179 |
|
Numerical Studies of Polycrystalline Silicon Film Growth Authors: Y. Kobayashi, K. Satake |
405 |
|
Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen Authors: M. Jacob, P. Pichler, Heiner Ryssel, Robert J. Falster, M. Cornara, D. Gambaro, M. Olmo, M. Pagani |
349 |
|
On the Amorphization of the Si/Ge Superlattices upon Ion Bombardement Authors: N.A. Sobolev, K. Gartner, Ute Kaiser, U. Konig, H. Presting, B. Weber, Elke Wendler, Werner Wesch |
289 |
|
On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C. Authors: M.-A. Trauwaert, Jan Vanhellemont, H.E. Maes, A.-M. Van Bavel, G. Langouche, Andre Stesmans, Paul Clauws |
1147 |
|
On the Effect of Lead on Irradiation Induced Defects in Silicon Authors: Marie-Laure David, Eddy Simoen, C. Claeys, V.B. Neimash, M. Kras'ko, A. Kraitchinskii, V. Voytovych, A. Kabaldin, Jean François Barbot |
373 |
|
On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals Authors: Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf |
17 |
|
On the Pairing between Indium and Carbon Atoms in Silicon Authors: U. Ott, Herbert Wolf, Th. Krings, Th. Wichert, H. Hässlein, R. Sielemann, Manfred Deicher, R.C. Newman, W. Zulehner |
1251 |
Keyword:
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Showing 721 to 730 of 1144 Papers
