Authors: Kenichi Murakami, T. Kubota, Fabienne Grégori, Brigitte Bacroix
Abstract: In order to elucidate the predominance of Goss grains after SIBM in electrical steel
sheets, Goss, D-Cube and {111}<112> grains after temper rolling of 5 and 9% reduction were
observed by TEM. In 5% strain the amount of dislocations in Goss grains was the smallest of the
three orientations. In 9% strain dislocations in Goss grains were distributed more heterogeneously
than the other two types of grains. It is considered that {111}<112> grains have large amounts of
dislocations owing to high Taylor factors and the differences of microstructures between Goss and
D-Cube grains are due to orientation stabilities. Goss grains are speculated to be easy to recover and
therefore they are predominant after SIBM.
271
Authors: Xenia Molodova, Günter Gottstein, Ralph Jörg Hellmig
Abstract: Pure Cu, CuZr and an Al-alloy were processed by Equal Channel Angular Pressing
(ECAP) at room temperature applying route Bc. Microstructure evolution during ECAP and
subsequent annealing was investigated. The deformed and annealed states were characterized by
EBSD, TEM and microhardness tests. The microstructure variation was recorded and compared to
the behavior of conventional cold rolled material. The study revealed a very low thermal stability of
ECAP deformed pure Cu samples compared to cold rolled material with same total strain. However,
the thermal stability was significantly improved by alloying with Zr. In contrast, ECAP deformed
Al-alloy showed higher thermal stability than cold rolled material.
259
Authors: Y. Ohnishi, Atsushi Yamamoto, Harushige Tsubakino, Mititaka Terasawa, Shigeo Nakahigashi
Abstract: Precipitation phenomena in an austenitic stainless steel, SUS316L cold-rolled with
various reduction rates were studied by transmission electron microscopy and synchrotron radiation
diffractmetry. After the aging at 573 K for 15000 h, two of precipitates were observed, which
were identified as M7C3 and M23C6 by SR diffraction and electro diffraction measurements. The
precipitates M7C3 were formed at both innergranular and grain boundary, while the precipitate
M23C6 was formed at innergranular. The precipitation was promoted with increasing cold rolling
reduction. Also segregation of phosphorous was detected along grain boundaries. Besides, the
residual stresses were measured with side inclination method using a synchrotron radiation facility,
SPring-8. The residual stresses were increased with increasing the cold rolling reduction rate.
1287
Authors: Eigo Kakutani, Masahiro Jotoku, Atsushi Yamamoto, Harushige Tsubakino
Abstract: A low impurity magnesium alloy has bean prepared. Deformation behavior in cold-rolling
and corrosion behavior of the alloy were compared with those of a commercial alloy. The specimens
were cold-rolled at room temperature with reduction rates of 0~80 %. Transmission electron
microscopic observations on the cold-rolled specimens were carried out. In the case of the low
impurity magnesium alloy, recrystallization easily occurred. Analyses of microstructures in the
deformed specimens were carried out by means of EBSP, and the recrystallization phenomena have
been discussed. Another effect of lowering the impurities is to improve a corrosion resistance with
changing the corrosion morphology.
1283
Authors: Hyung Seok Kim, Ju Hyung Suh, Chan Gyung Park, Sang Jun Lee, Sam Kyu Noh, Jin Dong Song, Yong Ju Park, Won Jun Choi, Jung Il Lee
Abstract: The microstructure and strain characteristics of self-assembled InAs/GaAs quantum dots
(QDs) were studied by using transmission electron microscopy. Compressive strain was induced to
uncapped QDs from GaAs substrate and the misfit strain largely increased after the deposition of
GaAs cap layer. Tensile strain outside QD was extended along the vertical growth direction; up to 15
nm above the wetting layer. Vertically nonaligned and aligned stacked QDs were grown by adjusting
the thickness of GaAs spacer layers. The QDs with a lens-shaped morphology were formed in the
early stage of growth, and their apex was flattened by the out-diffusion of In atoms upon GaAs
capping. However, aligned QDs maintained their lens-shaped structure with round apex after capping.
It is believed that their apex did not flatten because the chemical potential gradient of In was relatively
low due to the adjacent InAs QD layers.
1207
Authors: Shinji Fujisaki, Md. Hasan Zahir, Yumi H. Ikuhara, Yuji Iwamoto, Kotaro Kuroda
Abstract: La2O3 and/or Ga2O3 doped, and the double dopant γ-Al2O3 composite powder samples
were prepared by the sol-gel method. Nanostructural characterizations of the powder samples were
performed by high resolution transmission electron microscopy (HRTEM) in order to clarify the role
of the metal oxide dopants for the improved hydrothermal stability of the La2O3-doped Ga2O3-Al2O3
composite material. The results of HRTEM study and selected area electron diffraction (SAED)
analysis revealed the formation of the uniform solid solution of Ga2O3-Al2O3. In addition, the results
of X-ray elemental mapping analysis revealed the existence of well-dispersed La2O3 on the grain
surface of Ga2O3-Al2O3 solid solution. These structural features could act an important role for the
improved hydrothermal stability of the La2O3-doped Ga2O3-Al2O3 composite material.
1109
Authors: Koya Okudera, Koichi Hamada, Takanori Suda, Naoyuki Hashimoto, Somei Ohnuki
Abstract: “Environmental cell” microscopy was applied for surveying gas reaction of hydrides in
magnesium base alloys, which are candidates for hydrogen storage materials in advanced hydrogen
energy systems. In order to clarify the mechanism of hydrogenation process, in-situ experiment has
been carried out by using a 200 kV transmission electron microscope (TEM) equipped with a newly
developed environmental cell, which is capable to 0.1 MPa in the temperature range between R.T. and
200°C. When hydrogen gas reacted with magnesium powders, straightening of surface steps (60~70
nm in height) was observed, indicating that volume expansion occurred. In addition, the formation of
MgH2 was indicated in selected-area-diffraction patterns (SADP). The precise study on this in-situ
experiment, as well as its improvement, will be continued, with using transparent films.
877
Authors: Hung Su Im, Sang M. Lee, Chan Gyu Lee, Bon Heun Koo, Jung Bum Yoon, Myung Hwa Jung
Abstract: We indicated synthesization of LCMO by hydrothermal reaction. The results of
transmission electron microscopy revealed that the LCMO particles had wide range in size and
various in shapes. The LCMO particles had a perovskite-type crystal structure with some other
phases. Magnetic property was measured by physical property measurement system. Their
crystallinity and magnetization tended to increased with increasing reaction time.
703
Authors: Tatsuya Koyama, Akira Ishida, Kyosuke Kishida, Katsushi Tanaka, Haruyuki Inui
Abstract: Manganese-alloyed Ru2Si3-based alloys with various alloy compositions have been
prepared and the phase relationships of these alloys have been investigated as a function of the Mn
concentration using X-ray powder diffraction, scanning electron microscopy and transmission
electron microscopy. A series of Ru1-xMnxSiy chimney-ladder phases is confirmed to be formed over a
wide compositional range (x ≥0.12). These chimney-ladder phases are considered to be formed to
stabilize the HT-Ru2Si3 chimney-ladder phase through the substitution of Ru with Mn. The
compositions of the chimney-ladder phases are, however, significantly deviated from the idealized
composition satisfying the valence electron concentration rule: VEC=14.
229
Authors: Shunta Harada, Katsushi Tanaka, Kyosuke Kishida, Haruyuki Inui
Abstract: Effect of the ternary element of Mo on the crystal structure and thermoelectric properties of
ReSi1.75 has been investigated. The crystal structure of Mo-containing ReSi1.75 has shear structure up
to 1.5 at%, the structure changes into adaptive structure at larger Mo contents. The concentration of Si
vacancies estimated from the crystal structures determined decreases with increasing Mo content.
Thermoelectric properties of Mo-containing ReSi1.75 indicate that the character changes from p- to
n-type semiconductor upon alloying with Mo, which is explained by the decrease in Si vacancy
concentration.
197