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Microstructures and Growth Characteristics of Self-Assembled InAs/GaAs Quantum Dots Investigated by Transmission Electron Microscopy

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Abstract:

The microstructure and strain characteristics of self-assembled InAs/GaAs quantum dots (QDs) were studied by using transmission electron microscopy. Compressive strain was induced to uncapped QDs from GaAs substrate and the misfit strain largely increased after the deposition of GaAs cap layer. Tensile strain outside QD was extended along the vertical growth direction; up to 15 nm above the wetting layer. Vertically nonaligned and aligned stacked QDs were grown by adjusting the thickness of GaAs spacer layers. The QDs with a lens-shaped morphology were formed in the early stage of growth, and their apex was flattened by the out-diffusion of In atoms upon GaAs capping. However, aligned QDs maintained their lens-shaped structure with round apex after capping. It is believed that their apex did not flatten because the chemical potential gradient of In was relatively low due to the adjacent InAs QD layers.

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Periodical:

Advanced Materials Research (Volumes 26-28)

Pages:

1207-1210

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.26-28.1207

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Online since:

October 2007

Authors:

Hyung Seok Kim, Ju Hyung Suh, Chan Gyung Park, Sang Jun Lee, Sam Kyu Noh, Jin Dong Song, Yong Ju Park, Won Jun Choi, Jung Il Lee

Keywords:

InAs/GaAs Quantum Dot, Microstructure Characterization, Misfit Strain, TEM

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] D. J. Eaglesham: Phys. Rev. Lett. Vol. 64 (1990), p. (1943).

Google Scholar

[2] I. N. Kaiander, R. L. Sellin, T. Kettler, N. N. Ledentsov, D. Bimberg, N. D. Zakharov, and P. Werner: Appl. Phys. Lett. Vol. 84 (2004), p.2992.

DOI: 10.1063/1.1711171

Google Scholar

[3] J. Phillips, K. Kamath, and P. Bhattacharya: Appl. Phys. Lett. Vol. 72 (1998), p. (2020).

Google Scholar

[4] K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki: IEEE Trans. Electron Devices Vol. 41 (1994), p.1628.

DOI: 10.1109/16.310117

Google Scholar

[5] Y. Androussi, A. Lefebvre, B. Courboulès, N. Grandjean, J. Massies, T. Bouhacina, and J. P. Aimé, Appl. Phys. Lett. 65, 1162, (1994).

DOI: 10.1063/1.112128

Google Scholar

[6] J. A. Prieto, G. Armelles, T. Utzmeier, and F. Briones, J. C. Ferrer, F. Peiró, A. Cornet, and J. R. Morante, Phys. Rev. Lett. 80, 1094, (1998).

DOI: 10.1103/physrevlett.80.1094

Google Scholar

[7] V. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, and S. Oktyabrsky, Appl. Phys. Lett. 83 (2003) 833.

DOI: 10.1063/1.1598645

Google Scholar

[8] R. Songmuang, S. Kiravittaya, O. G. Schmidt, J. Cryst. Growth 249 (2003) 416.

Google Scholar

[9] A. Lenz, H. Eisele, R. Timm, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, and M. Dähne, Appl. Phys. Lett. 84 (2004) 2992.

DOI: 10.1063/1.1808884

Google Scholar

[10] N. P. Kobayashi, T. R. Ramachandran, P. Chen and A. Madhukar, Appl. Phys. Lett. 68 (1996) 3299.

Google Scholar

[11] V. Tokranov , M. Yakimov , A. Katsnelson , M. Lamberti , and S. Oktyabrsky , Appl. Phys. Lett. 83, 833 (2003).

DOI: 10.1063/1.1598645

Google Scholar

[12] R. Songmuang, S. Kiravittaya, O. G. Schmidt, J. Cryst. Growth 249, 416 (2003).

Google Scholar

[13] N. Y. Jin-Phillipp and F. Phillipp, J. Appl. Phys. 88, 710 (2000).

Google Scholar

[14] Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542, (1995).

Google Scholar

[15] H. Heidemeyer, S. Kiravittaya, C. Muller, N. Y. Jin-Phillipp, Appl. Phys. Lett. 80 (2002).

Google Scholar