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Articles by keyword: «Vacancy Cluster»

• A Positron Lifetime Study of Defects in Plastically Deformed Silicon
  Published in: Defects in Semiconductors 18 (p1177)
• Annealing Processes of Vacancies in Silicon Induced by Electron Irradiation: Analysis Using Positron Lifetime Measurement
  Published in: Positron Annihilation - ICPA-10 (p423)
• Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
  Published in: Silicon Carbide and Related Materials 2005 (p575)
• Comparison of Defect Structures in Fe-Cu Alloys by High-Speed and Low-Speed Deformation with the Detection of Cu Precipitates
  Published in: Positron Annihilation - ICPA-13 (p117)
• Defects in SiC: Theory
  Published in: Silicon Carbide and Related Materials 2010 (p225)
• Deformation-Induced Vacancy Clusters in InP Studied by Positron Annihilation
  Published in: Positron Annihilation - ICPA-9 (p1061)
• DFT Analysis of the Indium-Antimony-Vacancy Cluster in Silicon
  Published in: Defects and Diffusion in Semiconductors - an Annual Retrospective VIII (p29)
• Diagnostics of Radiation Defects in Silicon Carbide
  Published in: Positron Annihilation - ICPA-9 (p1021)
• Effect of Impurities on Vacancy Mobility in V-4Cr-4Ti
  Published in: PRICM-5 (p1441)
• Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
  Published in: Positron Annihilation - ICPA-12 (p111)
• Investigation of Fatigue Cracks in an Al-Based Alloy by Means of Pulsed Positron (Micro-)Beams
  Published in: Positron Annihilation - ICPA-13 (p126)
• Investigation on the Behaviour of Quenched-in Vacancies in CuZnAl Alloys by Positron Annihilation
  Published in: Positron Annihilation - ICPA-10 (p561)
• Irradiation Experiment Revisited – Stability and Positron Lifetime of Large Vacancy Clusters in Silicon
  Published in: Positron Annihilation - ICPA-12 (p135)
• Kinetic Mechanisms for the Deactivation of Nitrogen in SiC
  Published in: Silicon Carbide and Related Materials 2005 (p621)
• Observation of Vacancy Clusters in HTCVD Grown SiC
  Published in: Silicon Carbide and Related Materials 2004 (p469)