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Articles by keyword: «V_f Drift»

• Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1113)
• Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p155)
• Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
  Published in: Silicon Carbide and Related Materials 2004 (p965)
• Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p1329)
• High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
  Published in: Silicon Carbide and Related Materials 2005 (p1355)
• Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications
  Published in: Silicon Carbide and Related Materials 2006 (p895)
• Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2005 (p141)