Papers by Keyword: Zinc Oxide (ZnO)

Abstract: We have demonstrated the growth of ZnO thin films with c-axis orientation at room temperature on various substrates such as Si(100), SiO2, and sapphire by the r.f. magnetron sputtering method. X-ray diffraction (XRD) and scanning electron microscopy altogether indicated that the larger grain size and the higher crystallinity were attained when the ZnO films were deposited on sapphire substrates, compared to the films on Si or SiO2 substrates. The c-axis lattice constant decreased by thermal annealing for the ZnO films deposited on Si or SiO2 substrates, while increased by the thermal annealing for the ZnO films grown on sapphire substrates.

Abstract: The morphology evolution of ZnO films grown on sapphire (0001) by MOCVD have been studied as a function of buffer growth time and temperature by means of atomic-force microscope (AFM), x-ray diffractions (XRD) and optical microscopy. When the buffer growth temperature decreased to 450°C, the surface became smooth greatly, indicating the transition from typical 3D island growth to quasi-2D growth mode. As the buffer growth time exceeds 5min, the micron-sized pit-like features are formed. It is due to the lack of stabilization of adatoms under the “etching” action of ionized O2/Ar during high temperature buffer annealing

Abstract: The wide band-gap semiconductor, ZnO, has been proposed as one of the good host for Er3+ ions. In this investigation S was doped into the Er-containing ZnO specimens through the heat treatment in a H2S gas atmosphere. After sulfurization, the photoluminescence (PL) peak centered at 675nm from the ZnO host became much weaker, and accordingly the absorption peaks of Er3+ at 526nm, 550nm, and 665 nm became weaker. Also, the PL intensity around 1.54µm decreased after the sulfurization. However, when the sulfurized specimens were annealed at 1000oC in air, the PL intensity increased by about 3 times. The effects could be due to the modification of the local structure around the Er3+ ions in ZnO.

Abstract: Zinc oxide (ZnO) microtube has been fabricated by heating the mixture of ZnO and graphite powders in the atmosphere. The ZnO microtubes showed perfect hexagonal profiles with bell-mouth or normal hexagonal tops. Both X-ray diffraction (XRD) and high-resolution transmission electron microscopy (TEM) demonstrated that the product was composed of ZnO with typical hexagonal structure grown predominantly along (002) direction. The growth process was interpreted by means of vaporliquid-solid mechanism combining with the evaporation of metallic zinc.

Abstract: Zinc Oxide (ZnO) is a very useful as a solid state gas sensor material. In chemical sensing the surface and interface interactions between the analyte molecules and the sensing material is all but important that is read through the changes in electrical conductance. In that sense, nano-objects with a large surface atom/bulk atom ratio, like nanoparticles and nanowires, are potentially the best chemical sensors. The mechanism envisioned involves the adsorption (and eventually diffusion) of the analyte molecule at the surface that induces a change in the electrical resistance of the nano-object. The most convenient way to measure changes in electrical resistance in such devices is to obtain the specific material as nanowires or as connected nanoparticles. Here, we will discuss about a low-temperature wet-chemical process of synthesizing ZnO nanoparticles, nanowires and nanobelts for application as gas sensors.

Abstract: The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive investigation of their properties as a function of annealing temperature and film thickness. These structures, with some modifications, are utilised as Schottky diode hydrogen gas sensors and Surface Acoustic Wave (SAW) devices.