Simulation and analysis of a Single Mode Indium Gallium Arsenide Phosphide Vertical Cavity Surface Emitting Laser for Optical Communication

Abstract:

This present work is about simulating and analysing a Vertical Cavity Surface Emitting Laser (VCSEL) structure used in optical fibre communication systems. In this paper a VCSEL structure made of seven Quantum Wells of Indium Gallium Arsenide Phosphide (InGaAsP) emitting at 1550 nm is simulated. The device is analysed looking at the following characteristics: Direct current current and voltage (IV) characteristics, light power against electrical bias, optical gain against electrical bias, light distribution over the structure, output power and threshold current. Specification of material characteristics, ordinary physical models settings, initial VCSEL biasing, mesh declarations, declaration of laser physical models, their optical and electrical parameters were defined using Atlas syntax. Mirror ratings and quantum wells are the two main parameters that were studied and analysed to come up with structure trends. By determining important device parameters such as proper selection of the emission wavelength and choice of material; a VCSEL with an output power of 9.5 mW was simulated and compared with other structures.

• Periodical: Advanced Engineering Forum (Volume 43)
• Pages: 93-109
• DOI: https://doi.org/10.4028/www.scientific.net/AEF.43.93
• Online since: November 2021
• Authors: Ogomoditse Oduetse Moatlhodi, Ravi Samikannu, Nonofo M.J. Ditshego*
• Keywords: IndiumGallium Arsenide Phosphide, Laser, Optical Communication, Quantum well, Semiconductor, Single Mode, Vertical Cavity Surface Emitting Laser

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