Study on Bonding Properties of Copper and Aluminum in Nano Scale Using Molecular Dynamics Simulation

Abstract:

According to MD simulation results, pressing depth between two bonding materials will affect bonding strength. Alloy material (Al0.9Cu0.1) had void defect phenomenon in low bonding speed condition because the increasing chance of atom migration which will result in low bonding strength. High tensile speed causes material fracture phenomena happen earlier than low speed. Material stress in low speed is smaller than in high speed. Fracture morphology of material is different in different tensile speed. In low speed condition, material can be stretched thinner than in high speed condition. Material in high temperature has greater kinetic energy than low temperature; therefore, material in high temperature has better formability and behaves larger tensile strain than low temperature. For pure aluminum, when temperature raises to 900K which is close to melting point (933K), its crystal structure is no longer belongs to F.C.C. structure, so bonding strength is weaker than low temperature. Large size material has larger contact area than small size material; therefore, the tensile force and tensile strength of the former are larger than the latter. The order of bonding strength for these three materials is: binary alloy > pure copper > pure aluminum.

• Periodical: Applied Mechanics and Materials (Volumes 152-154)
• Pages: 183-187
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.152-154.183
• Online since: January 2012
• Authors: Quang Cherng Hsu, Yen Yu Cheng, Bao Hsin Liu
• Keywords: Bonding Strength, Embedded Atom Method, Molecular Dynamic (MD), Void Defect

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