Application of Wide Band Oxide Semiconductor in Bulk Heterojunction Solar Cells

Jian Min Ye

doi:10.4028/www.scientific.net/AMM.198-199.64

Paper Titles

Study on Frost Resistance of Nano SiO₂ Cement Concrete
p.48

Cytotoxicity and Immunotoxicity Assessment of NiO Nanoparticles Using the Chlamydomonas reinhardtii
p.52

Practical Research on Dephosphorization in Converter
p.56

Identification of Damage Modes in Twill-Weave Composite Based on EMD of AE Event
p.60

Application of Wide Band Oxide Semiconductor in Bulk Heterojunction Solar Cells
p.64

Bioceramic Composite Coatings Fabricated by Nd-YAG Laser Cladding Process on Ti6Al4V Substrate
p.68

Chemical Stability and Thermal Property of Hollow Hydroxyapatite Microspheres Fabricated by a Glass Immersion Process
p.72

Effect of VC Content on Abrasion Resistance of VC/Fe Composite
p.76

Micro-Morphology Character and Mineral Composition of PM₁₀ in Nanjing Typical Areas
p.81

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 198-199Application of Wide Band Oxide Semiconductor in...

Application of Wide Band Oxide Semiconductor in Bulk Heterojunction Solar Cells

Abstract:

To minimize interfacial power losses, thin layers of NiO, a p-type oxide semiconductor, are inserted between the active organic layer, poly(3-hexylthiophene) (P3HT) [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), and the ITO (tin-doped indium oxide) anode of bulk-heterojunction ITO/P3HT:PCBM/Al solar cells. The interfacial NiO layer is deposited by radio frequency (RF) magnetron sputtering deposition directly onto cleaned ITO, and the active layer is subsequently deposited by spin-coating. Insertion of the NiO layer affords cell power conversion efficiencies as high as 2.5% and enhances the fill factor to 56% and the open-circuit voltage (Voc) to 605 mV versus ones without NiO buffering layer control device. The value of such hole-transporting/electron-blocking interfacial layers is clearly demonstrated and should be applicable to other organic photovoltaics.

You might also be interested in these eBooks

Solar Cells: Research and Development of Solar Cells

View Preview

Applied Mechanics, Mechatronics Automation & System Simulation

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 198-199)

Pages:

64-67

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.198-199.64

Citation:

Cite this paper

Online since:

September 2012

Authors:

Jian Min Ye

Keywords:

Bulk Heterojunction, Oxide Semiconductor, Solar Cell, Wide Band Gap

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] R. Steim, S. A. Choulis, P. Schilinsky, and C. J. Brabec: Appl. Phys. Lett. Vol. 92 (2008), p.093303.

DOI: 10.1063/1.2885724

Google Scholar

[2] H.K. Kim, D. G. Kim, K. S. Lee, M. H. Huh, and S. H. Jeong, et al.: Appl. Phys. Lett. Vol. 86 (2005), p.183503.

Google Scholar

[3] J. Lewis, S. Grego, B. Chalamala, E. Vick, and D. Temple: Appl. Phys. Lett. Vol. 85 (2004), pp.3450-3452.

DOI: 10.1063/1.1806559

Google Scholar

[4] M. Al-Ibrahim, H. -K. Roth, and S. Sensfuss: Appl. Phys. Lett. Vol. 85 (2004), pp.1481-1483.

Google Scholar

[5] M.S. Kim, M.G. Kang, L.J. Guo, and J.S. Kim: Appl. Phys. Lett. Vol. 92 (2008), p.133301.

Google Scholar

[6] L. Ai, G.J. Fang, L.Y. Yuan, and X.Z. Zhao: Appl. Surf. Sci. Vol. 254 (2008), pp.2401-2405.

Google Scholar

[7] J. Halme, J. Saarinen, and P. Lund: Sol. Energy Mater. Sol. Cells Vol. 90 (2006), pp.887-899.

Google Scholar

[8] S.W. Tong, C.F. Zhang, C.Y. Jiang, G. Liu, Q.D. Ling, et al.: Chem. Phys. Lett. Vol. 453 (2008), pp.73-76.

Google Scholar