Synthesize Boron Doped Diamond Films on Porous Ti Substrates by DC-PCVD

Long Cheng Yin; Lin Xin Zhao; You Jin Zheng; Gui Hong Zuo; Hai Liang Huang; Dan Wang; Hong Wei Jiang; Chun Lei Wu

doi:10.4028/www.scientific.net/AMM.217-219.1200

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 217-219Synthesize Boron Doped Diamond Films on Porous Ti...

Synthesize Boron Doped Diamond Films on Porous Ti Substrates by DC-PCVD

Abstract:

Boron doped diamond (BDD) films were deposited on porous Ti substrates by direct current plasma chemical vapor deposition (DC-PCVD) system. For improve adhesion between diamond and porous Ti, and shorten diamond nucleation period, appropriate pretreatments were carried out. Micro diamond particles were mechanical embedded in the holes of porous Ti substrates and then nanodiamond powders were seeded on substrates by ultrasound sonication prior to deposition. The samples were examined by scanning electron microscopy (SEM), micro-Raman spectroscopy, and cyclic voltammetry. It was found that BDD films covered the whole porous Ti substrate surface, and exhibited the good electrochemical property.

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Applied Mechanics and Materials (Volumes 217-219)

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1200-1203

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.217-219.1200

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Online since:

November 2012

Authors:

Long Cheng Yin, Lin Xin Zhao, You Jin Zheng, Gui Hong Zuo, Hai Liang Huang, Dan Wang, Hong Wei Jiang, Chun Lei Wu

Keywords:

BDD, CVD, Porous Ti

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