Process Parameters Modeling and Optimizing for Compound Machining with Ultrasonic Vibration on SiC Wafer

Yong Liu; Shu Juan Li; Yan Li; Bo Wan

doi:10.4028/www.scientific.net/AMM.217-219.1520

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 217-219Process Parameters Modeling and Optimizing for...

Process Parameters Modeling and Optimizing for Compound Machining with Ultrasonic Vibration on SiC Wafer

Abstract:

Since it is difficult for ultrasonic vibration compound machining to get effective cutting mechanism mathematical model through dynamic analysis, and testing study is shown an effective method to solve this problem. Central Composite Design (CCD) testing was used to carry out following researches. Second-order relational model was established between tangential cutting force, surface roughness, and their main technological factors involved in SiC wafer vibration compound machining. Constraints of actual processing conditions on technological factors were discussed. Optimized target function was established to enhance processing efficiency of SiC wafer, which meant taking maximized sawing force as target. Particle Swarm Optimization (PSO) algorithm was designed to solve the issue, and obtain optimized process parameters meeting kinds of constraints.

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Periodical:

Applied Mechanics and Materials (Volumes 217-219)

Pages:

1520-1525

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.217-219.1520

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Online since:

November 2012

Authors:

Yong Liu, Shu Juan Li, Yan Li, Bo Wan

Keywords:

Central Composite Design, Particle Swarm Optimization (PSO), SiC Wafer, Ultrasonic Vibration

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