Analysis of LDMOS for Effect of Fingers, Device-Width and Inductance (Load) on Reverse Recovery

Abstract:

This work demonstrates the effect of fingers, device-width and inductance on reverse recovery of LDMOS by unclamped inductive switching (UIS) circuit simulation for two dimensional (2D) and three dimensional (3D) devices. All the observations have been done for maximum pulse width at which device pass under UIS test. For UIS simulations the failure criteria is taken as the device temperature reaching a critical value of 650K. It has been shown that reverse recovery charge (Q_rr) increased linearly with number of fingers, device width and inductance.

• Periodical: Applied Mechanics and Materials (Volumes 229-231)
• Pages: 2077-2081
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.229-231.2077
• Online since: November 2012
• Authors: Mohammed Sadique Anwar, Prima Sukma Permata, Md. Imran Siddiqui, Jung Ruey Tsai, Shao Ming Yang, Gene Sheu
• Keywords: Number of Fingers, Reverse Recovery Charge, Unclamped Inductive Switching

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