Electrical Properties of Polycrystalline α-HgI2 Detector

Gong Long Liu; Liao Yang; Wei Min Shi; Wei Guang Yang; Ya Li Wang; Lin Jun Wang

doi:10.4028/www.scientific.net/AMM.241-244.46

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 241-244Electrical Properties of Polycrystalline α-HgI2...

Electrical Properties of Polycrystalline α-HgI2 Detector

Abstract:

Potentially low cost and large-area polycrystalline mercuric iodide (α-HgI2) is one of the preferred materials for the fabrication of room temperature X-ray and gamma-ray detectors. In this paper, polycrystalline α-HgI2 films have been grown through combining vertical deposition method with hot wall vapor phase deposition (HWPVD) method. X-ray diffraction (XRD), scan electron microscopes (SEM) and Raman spectrum were used to characterization the HgI2 films obtained, and I-V characteristics was also tested. Using the polycrystalline α-HgI2 films, we get the detector. According to the detector, on the one hand, a dark current test is made by using KEITHL EY 485 picoammeter; on the other hand, the Agilent 4294A precision impedance analyzer is taken to test the characteristic curve of its capacitor frequency.

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Periodical:

Applied Mechanics and Materials (Volumes 241-244)

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46-49

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https://doi.org/10.4028/www.scientific.net/AMM.241-244.46

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Online since:

December 2012

Authors:

Gong Long Liu, Liao Yang, Wei Min Shi, Wei Guang Yang, Ya Li Wang, Lin Jun Wang

Keywords:

Detector, Electrical Properties, Polycrystalline HgI₂

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