Measurements of Young’s Modulus of Silicon Oxynitride Using Micro-Cantilever Structure

Abstract:

In this work, a SiON film with 25.78% nitrogen contents in film composition was deposited by RF magnetron sputtering. Micro SiON cantilevers were fabricated using MEMS sacrificial layer technology for tests. The micro-cantilever bending tests were done with the help of nanomechanical test system to characterize the Young’s modulus of the SiON. The results showed that the Young’s modulus of the SiON was 256 GPa. Because cantilevers can release the residual stress of the SiON film, the Young’s modulus we gained was more accurate than that early gained by other measuring methods.

• Periodical: Applied Mechanics and Materials (Volumes 271-272)
• Pages: 347-352
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.271-272.347
• Online since: December 2012
• Authors: Jian Dong, Heng Jiang, Xi Zeng
• Keywords: Bending Tests, Micro-Cantilever, Silicon Oxynitride, Young's Modulus

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