Dielectric Charging Failure Analysis of RF-MEMS Switch

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Abstract:

MEMS devices commercialization is hindered by reality problems. Among them main problem is caused by dielectric charging. This paper studies charging model and charges distribution which are constructed on adhesion failure. Lifetime prediction formula is given. Simulation results show that under the condition of low driven voltage requirement, lifetime is bigger than 1000 hours when elastic coefficient (K) adopts 4-16N/m, 0.4-1μm for dielectric thickness, 2-5μm for plate distance and S3iN4 as dielectric material. At last, C-V performances inflected by dielectric charging is studied by theoretical calculations and analyzing positive or negative charging respectively.

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170-173

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January 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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