Study on Cu Passivation Film’s Forming Condition in HEDP Electrolyte with BTA and Chloride Ion

Abstract:

The influence of corrosion inhibitor BTA, chloride ion and anodic potential on the formation of copper passivation film was studied in the electrolyte of 18wt% HEDP by using Linear Sweep Voltammetry (LSV) and electrochemical impedance spectroscopy (EIS). The results show that the increase of BTA concentration contributes to the formation of surface passivation film, and the chloride ion can promote the formation of the Cu passivation film at low concentrations but break it down when its concentration exceeds a certain limit. For each electrolyte there is a threshold anodic potential maintaining good passivation: the interfacial charge transfer resistance increases with the anodic potential when it is below the threshold potential and decreases when it is above the threshold potential. Smooth surface can be obtained by ECMP at the optimal processing condition.

• Periodical: Applied Mechanics and Materials (Volume 274)
• Pages: 471-474
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.274.471
• Online since: January 2013
• Authors: Jin Hu Wang, Wen Jie Zhai
• Keywords: BTA, Copper, ECMP, EIS, Passivation Film

References

[1] T. C Chang, T. M Tsai and P. T Liud: Thin Solid Films Vol. 447–448, 30(2004), p.524.

[2] L. Ecomomikos, X. Wang and A. Sakamoto: Proc. of the IEEE International (2004), p.233.

[3] K. G. Shattack, A. C. West: J. Appl. Electrochem, Vol. 39 , 10(2009), p.1719.

[4] A Tripathi, I I Suni, Y Li, F Doniat and J McAndrew: J Electrochem Soc. Vol. 156, 7(2009), p.555.