Atom-Rich and Defect Effects on Electronic Structure and Magnetism in Co2MnGe/MgO Heterojunction

Feng Cai; Bo Wu; Yu Feng; Ying Chen; Hong Kuan Yuan; Hong Chen

doi:10.4028/www.scientific.net/AMM.275-277.1838

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 275-277Atom-Rich and Defect Effects on Electronic...

Atom-Rich and Defect Effects on Electronic Structure and Magnetism in Co₂MnGe/MgO Heterojunction

Abstract:

We investigated the atomic rich and defect effects on the half-metallicity of the full-Heusler alloy Co₂MnGe from the first principles. Our results show that both Mn-rich and Co-rich could increase the tunnel magnetoresistance (TMR) of the Co₂MnGe/MgO magnetic tunnel junctions (MTJs). As for defect, all of investigated Co, Mn and Ge defect show that the spin polarization at E_f and the TMR in the MTJs with Co and Mn defect is significatively decreased except for Ge-defected MTJs.

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Applied Mechanics and Materials (Volumes 275-277)

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1838-1842

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https://doi.org/10.4028/www.scientific.net/AMM.275-277.1838

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January 2013

Authors:

Feng Cai, Bo Wu, Yu Feng, Ying Chen, Hong Kuan Yuan, Hong Chen

Keywords:

Defect, Heterojunction, Heusler Alloy, TMR

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