[1]
D.B. Strukov, G.S. Snider, D.R. Stewart, and R.S. Williams: The missing memristor found. Nature, 453, p.80–83, (2008).
DOI: 10.1038/nature06932
Google Scholar
[2]
L.O. Chua: Memristor – The missing circuit element. IEEE Trans. Circuit Theory, vol. CT-18, no. 5, p.507–519, Sept. (1971).
DOI: 10.1109/tct.1971.1083337
Google Scholar
[3]
L.O. Chua and S.M. Kang: Memristive Devices and Systems. Proc. of the IEEE, 1976, 64 (2), pp.209-223.
Google Scholar
[4]
Chua, L.O.: Device Modeling Via Basic Nonlinear Circuit Elements. IEEE Trans. On Circ. Syst., 1980, vol. CAS-27, no. 11, pp.1014-1044.
DOI: 10.1109/tcs.1980.1084742
Google Scholar
[5]
L.O. Chua's Invited Talk, Memristor and Memristive Systems Symposium, UC Berkeley, Berkeley, CA, Nov. 21, (2008).
Google Scholar
[6]
M. Di Ventra, Y.V. Pershin, and L.O. Chua: Circuit elements with memory: memristors, memcapacitors, and meminductors. Proceedings of the IEEE, 97 (10), 2009, pp.1717-1724.
DOI: 10.1109/jproc.2009.2021077
Google Scholar
[7]
L.O. Chua: Resistance switching memories are memristors. Applied Physics A, 2011, 102, pp.765-783.
DOI: 10.1007/s00339-011-6264-9
Google Scholar
[8]
T. Prodromakis, C. Toumazou, and L. Chua: Two centuries of memristors. Nature Materials, vol. 11, June 2012, pp.478-481.
DOI: 10.1038/nmat3338
Google Scholar
[9]
V.J. Francis: Fundamentals of Discharge Tube Circuits. London, England: Methuen, (1948).
Google Scholar
[10]
A.L. Hodgkin and A.F. Huxley: A quantitative description of membrane current and its application to conduction in nerve. J. Physiol., vol. 117, 1952, pp.500-544.
DOI: 10.1113/jphysiol.1952.sp004764
Google Scholar
[11]
H.J. Reich and W.A. Depp: Dynamic Characteristics of Glow Discharge Tubes. J. Appl. Phys., vol. 9, No. 6, 1938, pp.421-426.
Google Scholar
[12]
Y.V. Pershin and M. Di Ventra: Memory effects in complex materials and nanoscale systems. Advances in Physics 60, 145-227 (2011).
DOI: 10.1080/00018732.2010.544961
Google Scholar
[13]
M. Di Ventra and Y.V. Pershin: Memory Materials: a unifying description. MaterialsToday, December 2011, Vol. 14, No. 12, pp.584-591.
DOI: 10.1016/s1369-7021(11)70299-1
Google Scholar
[14]
D. Biolek: Modeling, Simulation and Analog Emulation of Memristors and Higher-Order Elements. Invited talk, 3rd Memristor and Memristive Symposium, Turin, Italy, August (2012).
Google Scholar
[15]
G.F. Oster and D.M. Auslander: The Memristor: A New Bond Graph Element. Transactions of the ASME, paper No. 72-Aut-N, 1972, pp.1-4.
Google Scholar
[16]
Y.I. Dimitrienko: Nonlinear Continuum Mechanics and Large Inelastic Deformations, Series: Solid Machanics and Its Applications, Vol. 174, Springer, 1st Edition, 2011, XXIV, 600 p.
DOI: 10.1007/978-94-007-0034-5
Google Scholar
[17]
B.L. Deam: Seismic Ratings for Residential Timber Buildings. Building Research Association of New Zealand, Study Report SR 73 (1997). BRANZ, The Resource Centre For Building Excellence, May 1997, Judgeford, Wellington, New Zealand.
Google Scholar
[18]
D. Jeltsema and J.M.A. Scherpen: Multidomain Modeling of Nonlinear Networks and Systems. Energy-and Power-Based Perspectives. IEEE Control Systems Magazine, August 2009, pp.28-59.
Google Scholar
[19]
A.G. Radwan, M.A. Zidan, and K.N. Salama: On the mathematical modeling of memristors. In Proc. 22nd Int. Conference on Microelectronics (ICM 2010), Cairo, Egypt, 2010, p.284–287.
DOI: 10.1109/icm.2010.5696139
Google Scholar
[20]
Z. Biolek, D. Biolek, and V. Biolková: Computation of the Area of Memristor Pinched Hysteresis Loop. IEEE Trans. On Circuits and Systems II: Express Briefs, Sept. 2012, No. 9, pp.607-611.
DOI: 10.1109/tcsii.2012.2208670
Google Scholar
[21]
Z. Biolek, D. Biolek, and V. Biolková: SPICE Model of Memristor with Nonlinear Dopant Drift. Radioengineering, vol. 18, no. 2, 2009, pp.210-214.
Google Scholar
[22]
D. Biolek, Z. Biolek, and V. Biolková: Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be 'self-crossing. Electronics Letters, vol. 47, no. 25, 2011, p.1385–1387.
DOI: 10.1049/el.2011.2913
Google Scholar