Resistive Switching Characteristics in Nanocrystalline Silicon Films for Conductive-Bridging Resistive Random-Access Memory Applications

Abstract:

In this paper, intrinsic nanocrystalline silicon thin films were deposited onto the ITO/glass substrates by PECVD and were used as the conduction material for the conductive-bridging random-access memory devices. The resistive switching characteristics of the nanocrystalline silicon thin films were investigated. Experimental results have shown that the stable bipolar resistive switching of the nc-Si films and retention time over 10⁴s. In addition, the current conduction mechanism of the nanocrystalline silicon films was examined with XPS depth file analysis. It clearly indicates that the conduction mechanism for the resistive switching is formation metallic bridges come form metal cation migration in the nanocrystalline silicon films.

• Periodical: Applied Mechanics and Materials (Volumes 284-287)
• Pages: 2565-2569
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.284-287.2565
• Online since: January 2013
• Authors: Jian Yang Lin, Bing Xun Wang
• Keywords: Conductive-Bridging Random-Access Memory, Ion Migration, Nanocrystalline Silicon, Resistive Switching

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