Variability Analysis of Pi Network Impedance Matching

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Harmonic rejection ability and reflection coefficient are the most important factors in the design of impedance matching network. However, stability of impedance matching should be taken into account in applications existing load impedance variation and component deviation due to tolerance and process variation. This paper investigates variability of Pi network impedance matching analytically. The relationships between resulting reflection coefficient with component deviation and load impedance variation are theoretically derived on the basis of Q-based design method. The deviation from perfect match due to component deviation is proportional to quality factor. Higher quality factor probably means poorer quality in terms of variability. The resulting reflection coefficient caused by load impedance variation increases rapidly when the load reflection coefficient is larger than 0.66. A small variation in the load impedance will cause a large deviation from perfect match when the impedance difference between load and source is quite large.

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2527-2531

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February 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] Chung B.K.: Q-based design method for T network impedance matching, Microelectronics J., 2006, 37, (9), p.1007–1011.

DOI: 10.1016/j.mejo.2006.01.019

Google Scholar

[2] Motorola Application Note AN-721: Impedance matching networks applied to RF power transistors, Motorola Inc., (1993).

Google Scholar

[3] Gilbert E.: Impedance matching with lossy components, IEEE Trans. Circuits Syst., 1975, 22, (2), p.96–100.

DOI: 10.1109/tcs.1975.1084016

Google Scholar

[4] Thompson M., Fidler J.K.: Determination of the impedance matching domain of impedance matching networks, IEEE Trans. Circuits Syst. I: Regular Papers, 2004, 51, (10), p.2098–2106.

DOI: 10.1109/tcsi.2004.835682

Google Scholar

[5] Liao R.J., Tan J.W., Wang H.: Q-based design method for impedance matching network considering load variation and frequency drift, Microelectron. J., 2011, 42, (2), p.403–408.

DOI: 10.1016/j.mejo.2010.09.013

Google Scholar

[6] Chen F, Weber R.J.: A novel process-variation insensitive network for on-chip impedance matching, IEEE Int. Symp. Commun. Inf. Technol. (ISCIT), 2004, (1), pp.43-46.

DOI: 10.1109/iscit.2004.1412446

Google Scholar

[7] Nieuwoudt A, Ragheb T, Nejati H, Massoud Y.: Variation tolerant design methods for wideband low noise amplifiers, Analog Integr. Circ. S., 2009, 58, (1), p.49–54.

DOI: 10.1007/s10470-008-9212-7

Google Scholar

[8] Hastings A.: The art of analog layout, (Prentice-Hall Inc., 2001), p.200–203.

Google Scholar

[9] Dogra V.S., Zhang M., Bhatt S.: High-intensity focused ultrasound (HIFU) therapy applications, Ultrasound Clin., 2009, 4, (3), p.307–21.

DOI: 10.1016/j.cult.2009.10.005

Google Scholar

[10] Chung B.K.: Variability analysis of impedance matching network, Microelectron. J., 2006, 37, (1), p.419–23.

Google Scholar

[11] Sun Y., Fidler J.K.: Design method for impedance matching networks, IEE Conf. Proc. Circuits Devices Syst., 1996, 143, (4), p.186–94.

DOI: 10.1049/ip-cds:19960566

Google Scholar

[12] Bowick C.: RF Circuit Design, (Newnes, 1997), p.63–102.

Google Scholar