Effects of Al on the Flat Band Potential of Nanostructured TiO₂ Electrodes

Abstract:

In this paper, Al(NO3)3•9H2O was used as raw material and the nanoparticles of Al-doped TiO2 were prepared by hydrothermal method. The nanoparticles and films were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Ultraviolet and Visible Spectroscopy (UV-Vis). The flat band potential (Efb) of nanostructured TiO2 and Al-doped TiO2 in acetone have been determined with spectroelectrochemistry measurement. The results show that Al doping decreases the energy gap and improves the absorption ability in visible region. On the other hand, Al doping TiO2 can effectively embarrass the crystal growth of TiO2. Specifically, the Efb of TiO2 and Al-doped TiO2 can be determined to be -0.6 V and -0.3V.

• Periodical: Applied Mechanics and Materials (Volumes 291-294)
• Pages: 2731-2733
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.291-294.2731
• Online since: February 2013
• Authors: Shu Ming Yang, Guang Hui Zhu, Shu Pei Guo
• Keywords: Al Doping, Flat Band Potential, Spectroelectrochemistry, TiO₂ Electrode

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