Real Time Simulation of Insulated Gate Bipolar Transistor

Xiao Jun Ma; Zong Min Yang; Chun Guang Liu; Yu Lin Yan

doi:10.4028/www.scientific.net/AMM.299.75

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 299Real Time Simulation of Insulated Gate Bipolar...

Real Time Simulation of Insulated Gate Bipolar Transistor

Abstract:

The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example. The function model of IGBT for real time simulation is built by piecewise interpolation method, in which the parameters are get from the datasheet. The real time simulation of IGBT is realized in field programmable gate array (FPGA), and the results can reflect the key performances of switching process.

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Periodical:

Applied Mechanics and Materials (Volume 299)

Pages:

75-78

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.299.75

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Online since:

February 2013

Authors:

Xiao Jun Ma, Zong Min Yang, Chun Guang Liu, Yu Lin Yan

Keywords:

Current Spikes, Insulated Gate Bipolar Transistor, Real Time Simulation, Switching Loss, Voltage Spike

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References

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