Study on the Stability of Micro-Area Sheet Resistance at Testing a Large Silicon Wafer when Probes Vacillated

Xin Fu Liu; Zhi Hui Zhu; Ru Qing Zhang; Run Li Zhang

doi:10.4028/www.scientific.net/AMM.303-306.399

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 303-306Study on the Stability of Micro-Area Sheet...

Study on the Stability of Micro-Area Sheet Resistance at Testing a Large Silicon Wafer when Probes Vacillated

Abstract:

This article briefly elaborated the basic concepts of the probe vacillated at testing a large silicon wafer with square four point probe equipment. The importance of the micro-area’s sheet resistance is discussed and the basic principles of four point probe measurement technology are analyzed. Some factors that affect the measurement accuracy are studied, and interference can be avoided while measuring and analyzing the impact on square four point probe measurement by probe vacillate. The calculation formula of the square micro-area probe measurement is deduced when probes vacillated discretionarily. At last, an experiment was made with a small wafer sample and accurate resistivity was gotten.

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Periodical:

Applied Mechanics and Materials (Volumes 303-306)

Pages:

399-402

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.303-306.399

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Online since:

February 2013

Authors:

Xin Fu Liu, Zhi Hui Zhu, Ru Qing Zhang, Run Li Zhang

Keywords:

Four-Point Probe, Micro-Area’s Sheet Resistance, Stability, Vacillations

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