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A Study on the Computer Simulation for the Fractal Growth of Semiconductor Thin Films

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Abstract:

This paper is based on theoretical methods to study the computer simulation and analysis of the growth of semiconductor thin films. First, according to the traditional theory of thin-film growth, the relationship between the growth morphology and the physical parameters are discussed. Then, fractal theory has been applied to improve the diffusion-limited aggregation (DLA) model. And the simulations of the two-dimensional and three-dimensional thin-film growth are proposed. A computer program of the simulation of the thin-film growth is developed with help of MATLAB. Finally, the results of the simulation of the thin-film growth have been analyzed by the fractal dimension and multifractal spectra. The results of this paper can be applied to the dynamic simulation of nanometer thin-film growth, and an effective simulation tool is to provide the semiconductor process.

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Periodical:

Applied Mechanics and Materials (Volume 311)

Pages:

451-455

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.311.451

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Online since:

February 2013

Authors:

Liang Wen Ji, Mei Li Tsai

Keywords:

Computer Simulation, Diffusion-Limited Aggregation, Fractal Dimension, Fractal Theory, Multifractal Spectra, Semiconductor Thin Film

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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