Hole Doping Through Indium Intercalation Into Nickel Phthalocyanine

Pakorn Prajuabwan; Sunit Rojanasuwan; Annop Chanhom; Anuchit Jaruvanawat; Adirek Rangkasikorn; Jiti Nukeaw

doi:10.4028/www.scientific.net/AMM.313-314.148

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 313-314Hole Doping Through Indium Intercalation Into...

Hole Doping Through Indium Intercalation Into Nickel Phthalocyanine

Abstract:

A new intercalation of indium and nickel phthalocyanine(NiPc) thin films is developed by using thermal co-evaporation technique. X-ray diffractometer(XRD) and optical absorption spectroscopy of In-doped NiPc suggest the crystal structure of In-doped NiPc is α-phase as same as that of pristine NiPc. Current-voltage characteristic of Shottky diode fabricated with In-doped NiPc thin film shows the enhancement of charge carrier concentration due to indium doping. Further photoelectron spectroscopy experiments prove that In-doped NiPc is hole transport material.

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Periodical:

Applied Mechanics and Materials (Volumes 313-314)

Pages:

148-156

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.313-314.148

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Online since:

March 2013

Authors:

Pakorn Prajuabwan, Sunit Rojanasuwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, Jiti Nukeaw

Keywords:

Electron Doping, Hole Doping, Indium Doped Nickel Phthalocyanine

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References

[1] N. B. McKeown, "Phthalocyanine Materials" Cambridge University Press, Cambridge (1998).

Google Scholar

[2] M.F. Craciun, S. Rogge, and A.F. Morpurgo, "Correlation between Molecular Orbitals and Doping Dependence of the Electrical Conductivity in Electron-Doped Metal−Phthalocyanine Compounds," J. Am. Chem. Soc. 127, 12210 (2005).

DOI: 10.1021/ja054468j

Google Scholar

[3] U. Weiler, T. Mayer, W. Jaegermann, C. Kelting , D. Schlettwein, S. Makarov , and D. Wöhrle, " Electronic Energy Levels of Organic Dyes on Silicon: A Photoelectron Spectroscopy Study of ZnPc, F16ZnPc, and ZnTPP on p-Si(111):H" J. Phys. Chem. B, 108, 19398-19403 (2004).

DOI: 10.1021/jp0467200

Google Scholar

[4] A. Ruocco, F. Evangelista, R. Gotter, A. Attili, and G. Stefani, " Evidence of Charge Transfer at the Cu-phthalocyanine/Al(100) Interf," J. Phys. Chem. C. 112, 2016-2025 (2008).

DOI: 10.1021/jp076299q

Google Scholar

[5] N. Papageorgiou, Y. Ferro, E. Salomon, A. Allouche, and J. M. Layet, "Geometry and electronic structure of lead phthalocyanine: Quantum calculations via density-functional theory and photoemission measurements," Phys. Rev. B. 68, 235105 (2003).

DOI: 10.1103/physrevb.68.235105

Google Scholar