Design and Simulation of a Novel Horizontal Sensitive Inertial Micro-Switch with Low G Value

Yong Liang Wang; Wen Guo Chen; Zhao Yu Wang; Gui Fu Ding; Xiao Lin Zhao

doi:10.4028/www.scientific.net/AMM.336-338.281

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 336-338Design and Simulation of a Novel Horizontal...

Design and Simulation of a Novel Horizontal Sensitive Inertial Micro-Switch with Low G Value

Abstract:

A novel horizontal sensitive inertial micro-switch with low g value was proposed and simulated in ANSYS, and was fabricated on quartz substrate based on non-silicon surface micromaching technology. Due to this special design, the micro-switch has a very good horizontal unidirectional sensitivity. The contact effect is improved by a modification of the traditional design. The flexible contact between the proof mass electrode and fixed electrode prolongs the contact time and reduces the rebound effect. The contact time is about 100μs under a half-sine wave shock with a12g peak value.

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Periodical:

Applied Mechanics and Materials (Volumes 336-338)

Pages:

281-285

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.336-338.281

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Online since:

July 2013

Authors:

Yong Liang Wang, Wen Guo Chen, Zhao Yu Wang, Gui Fu Ding, Xiao Lin Zhao

Keywords:

Finite Element Method (FEM), Inertial Micro-Switch, Unidirectional Sensitivity

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