Optical Transmittance and Band Gap of Electrodeposited Cu2O/ITO Layers

Fei Hu; Zhi Yu He; Xiao Hong Li; Yue Hui Hu

doi:10.4028/www.scientific.net/AMM.34-35.1421

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 34-35Optical Transmittance and Band Gap of...

Optical Transmittance and Band Gap of Electrodeposited Cu₂O/ITO Layers

Abstract:

Cuprous oxide films are successfully electrodeposited through the reduction of cupric ions in alkaline and acid electrolytes. The effect of electrodeposition parameters on the optical band gaps of Cu2O films is investigated using UV-vis spectroscopy. It is found that the optical transmittances and the band gaps of the Cu2O thin films are strongly influenced by the electrodeposition bath, the temperature, the current density, and the pH value. The band gaps are varied from 1.80 eV to 2.43 eV with different electrodeposition parameters.

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Periodical:

Applied Mechanics and Materials (Volumes 34-35)

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1421-1424

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https://doi.org/10.4028/www.scientific.net/AMM.34-35.1421

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October 2010

Authors:

Fei Hu, Zhi Yu He, Xiao Hong Li, Yue Hui Hu

Keywords:

Bandgap, Cuprous Oxide, Electro-Deposition, Optical Transmittance

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