Annealing-Induced Transformation of Defects in ZnO Single Crystal and the Effects on the Optical Properties

Abstract:

ZnO single crystals were prepared and then sequentially annealed from 573 to 1073 K in air atmosphere. Optical transmittance spectra (OTS), X-ray excited luminescence (XEL), and photoluminescence (PL) were measured before and after each step of annealing. The lower temperature annealing can enhance the emission but hardly affect the optical transmittance. Contrarily, higher temperature treatments ameliorated the transmittance but degraded emission. Based on experimental results, the blue and green emissions, as well as the 400-500-nm absorption were assigned to isolated zinc interstitial, zinc vacancy and oxygen vacancy in ZnO, respectively. In addition, the defect complexes play important role on optical properties of ZnO crystal. Our results provide further insight into understanding defects and defect complexes in ZnO crystals.

• Periodical: Applied Mechanics and Materials (Volumes 341-342)
• Pages: 311-314
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.341-342.311
• Online since: July 2013
• Authors: Wei Feng Li, Xi Qi Feng
• Keywords: Annealing, Defect, Luminescence, ZnO Single Crystal

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