AlNGaN HEMT T-Gate Optimal Design

Xiao Wei Zhang; Ke Jin Jia; Yuan Gang Wang; Zhi Hong Feng; Zheng Ping Zhao

doi:10.4028/www.scientific.net/AMM.347-350.1790

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 347-350AlNGaN HEMT T-Gate Optimal Design

AlNGaN HEMT T-Gate Optimal Design

Abstract:

The GaN HEMT is widely used in high-frequency aspects, use the T-gate to reduce gate resistance is one of the most effective methods to improve the the device maximum oscillation frequency (fmax). But f_max is very sensitive to T-gate size, improper selection may reduce f_max, Therefore, in order to reduce the cost of production, it is necessary to select appropriate simulation T-gate size. We have worked out AlGaN/GaN HEMT with gate length of 0.17μm and f_max values 110GHz. Accuracy of the simulation model is verified by experiment. Then detailed simulates the impact of the T-gate size and we obtain ptimized T-gate size range.

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Periodical:

Applied Mechanics and Materials (Volumes 347-350)

Pages:

1790-1792

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.347-350.1790

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Online since:

August 2013

Authors:

Xiao Wei Zhang, Ke Jin Jia, Yuan Gang Wang, Zhi Hong Feng, Zheng Ping Zhao

Keywords:

Frequency Characteristic, Gan HEMT, Simulation Model, T-Gate Size

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References

[1] Delage S.L., E. Morvan, N. Sarazin, et. al., Achievement and Perspective of GaN Technology for Microwave Applications, 18th International Conference on Microwaves, Radar and Wireless Communications, Levitas. (2010).

Google Scholar

[2] Mishra, U. K and Gaas, Status of AlGaN/GaN HEMT Technology – A UCSB perspective. GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, 2005. 21-27.

DOI: 10.1109/ieeeconf10831.2005

Google Scholar

[3] Ma Xiangbai, Hao Yue, Zhang Jincheng, Microwave power, Research progress of AlGaN\/GaN HEMT, Electronic Science and technology, (2006).

Google Scholar

[4] M.A. Khan, J.N. Kuznia, D.T. Olson, et al., Microwave performance of a 0. 25mm gate AlGaN/GaN heterostructure field effect transistor, Appl. Phs. Lett., 1994, 65(9): 1121-1123.

DOI: 10.1063/1.112116

Google Scholar

[5] Micovi, M., N.X. Nguven, P. Janke, et al., GaN/AlGaN high electron mobility transistors with f(tau) of 110GHz. Electronics Letters, 2000. 36(4). 358-359.

Google Scholar

[6] Chung , J. W, Hoke, W. E, Chumbes, E. M, et al., AlGaN/GaN HEMT With 300-GHz fmax, Electron Device Letters, 2010. 31(3). 195-197.

DOI: 10.1109/led.2009.2038935

Google Scholar

[7] O Breitschadel, L Kley, H Grabeldinger, et al., Short-Channel effects in AlGaN/GaN HEMTs, Materials Science and Engineering: B, 2001, 82(1). 238-240.

DOI: 10.1016/s0921-5107(00)00747-9

Google Scholar

[8] Jessen, G. H, Fitch, R. C, Gillespie, J. K, et al., Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-gate Devices, Electron Devices, 2007, 54(10). 2589-2597.

DOI: 10.1109/ted.2007.904476

Google Scholar