Impact of Pulse Quenching Effect on Sensitive Area at Advanced Technologies

Wen Tao Xu; Yang Guo; Yan Kang Du

doi:10.4028/www.scientific.net/AMM.392.693

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 392Impact of Pulse Quenching Effect on Sensitive Area...

Impact of Pulse Quenching Effect on Sensitive Area at Advanced Technologies

Abstract:

The impact of pulse quenching effect on the sensitive area is evaluated by using three-dimensional technology computer-aided design (TCAD) numerical simulation. Simulation results present that the pulse quenching effect could effectively reduce the sensitive area of PMOS transistors. By adopting the off-state gate isolation technique, the sensitive area is further reduced.

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Periodical:

Applied Mechanics and Materials (Volume 392)

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693-696

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https://doi.org/10.4028/www.scientific.net/AMM.392.693

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Online since:

September 2013

Authors:

Wen Tao Xu, Yang Guo, Yan Kang Du

Keywords:

Charge Sharing, Pulse Quenching Effect, Sensitive Area, Set

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