Design of a K Band MEMS Switch with CPW Defected Ground Structure

Zhong Liang Deng; Cai Hu Chen; Sen Fan; Hua Gong; Xiao Fei Sun

doi:10.4028/www.scientific.net/AMM.397-400.1844

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 397-400Design of a K Band MEMS Switch with CPW Defected...

Design of a K Band MEMS Switch with CPW Defected Ground Structure

Abstract:

This paper presents a K band (18GHz-26.5GHz) shunt capacitive micro-electromechanical systems (MEMS) switch. This switch used the coplanar waveguide (CPW) Defected ground structure (DGS) which is made by etching defect structure in CPW ground line. Furthermore the beam structure of the proposed switch is composed of one girder and two supporting beams. The design of the switchs structure is benefit to the apart between the DC signal and AC signal. The simulated values of the isolation of the switch on off-states is-55 dB at18.9 GHz, and the return loss at K band is greater than-0.3 dB. The pull-in voltage of the switch is 13.3 V.

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Periodical:

Applied Mechanics and Materials (Volumes 397-400)

Pages:

1844-1849

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.397-400.1844

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Online since:

September 2013

Authors:

Zhong Liang Deng, Cai Hu Chen, Sen Fan, Hua Gong, Xiao Fei Sun

Keywords:

DGS, High Isolation, K Band, Low Pull-In Voltage, MEMS Switch

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References

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